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Volumn 67, Issue 20, 2003, Pages
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Theoretical investigation of extended defects and their interactions with vacancies in SixGe1−x
a b c |
Author keywords
[No Author keywords available]
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Indexed keywords
GERMANIUM DERIVATIVE;
SILICON DERIVATIVE;
AB INITIO CALCULATION;
ARTICLE;
ATOM;
ELECTRONICS;
MOLECULAR INTERACTION;
STRUCTURE ANALYSIS;
THEORY;
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EID: 85038976425
PISSN: 10980121
EISSN: 1550235X
Source Type: Journal
DOI: 10.1103/PhysRevB.67.205317 Document Type: Article |
Times cited : (5)
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References (17)
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