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Volumn 67, Issue 20, 2003, Pages

Theoretical investigation of extended defects and their interactions with vacancies in SixGe1−x

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM DERIVATIVE; SILICON DERIVATIVE;

EID: 85038976425     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.205317     Document Type: Article
Times cited : (5)

References (17)
  • 2
    • 85039030506 scopus 로고    scopus 로고
    • Semiconductors and Semimetals
    • Robert Hull and John C. Bean, of the series, Academic, San Diego
    • Germanium Silicon: Physics and Materials, edited by Robert Hull and John C. Bean, Vol. 56 of the series Semiconductors and Semimetals (Academic, San Diego, 1999).
    • (1999) Germanium Silicon: Physics and Materials , vol.56
  • 8
    • 0000541543 scopus 로고
    • F. R. N. NabarroNorth-Holland, Amsterdam
    • H. Alexander, in Dislocations in Solids, edited by F. R. N. Nabarro (North-Holland, Amsterdam, 1986), Vol. 7, p. 115.
    • (1986) Dislocations in Solids , vol.7 , pp. 115
    • Alexander, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.