Nonvolatile Spintronic Memory Array Performance Benchmarking Based on Three-Terminal Memory Cell

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

Volumn 3, Issue , 2017, Pages 10-17

  Pan, Chenyun ^a   Naeemi, Azad ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Domain wall (DW); magnetoelectric (ME); performance modeling; read disturb rate; spin diffusion (SD); spin Hall effect (SHE); spintronic memory

Indexed keywords

BENCHMARKING; CELLS; COMMERCE; CRYSTAL SYMMETRY; CYTOLOGY; DOMAIN WALLS; ENERGY DISSIPATION; MEMORY ARCHITECTURE; RANDOM ACCESS STORAGE; SEMICONDUCTOR STORAGE; TUNNEL JUNCTIONS;

ENERGY DELAY PRODUCT; MAGNETIC TUNNEL JUNCTION; PERFORMANCE MODEL; RANDOM ACCESS MEMORY; READ DISTURB; READ/WRITE PERFORMANCE; SPIN DIFFUSIONS; SPIN TRANSFER TORQUE;

SPIN HALL EFFECT;

ELECTROMAGNETIC ABSORPTION; MAGNETIC PROPERTIES;

EID: 85033453270     PISSN: None     EISSN: 23299231     Source Type: Journal    
DOI: 10.1109/JXCDC.2017.2669213     Document Type: Article

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