Fabrication and characterization of VO2-based series and parallel RF switches

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2017, Pages 278-280

  Jiang, Junwen ^a   Chugunov, Grigory ^b   Mansour, Raafat R ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

^b AMD   (Canada)

Author keywords

Atomic Force Microscopy; RF switch; Vanadium oxide; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; OXIDES; VANADIUM; VANADIUM COMPOUNDS; X RAY DIFFRACTION;

COPPER-BASED; FABRICATION AND CHARACTERIZATIONS; FABRICATION PROCESS; MEASURED RESULTS; PARALLEL SWITCH; RF SWITCH; SERIES SWITCHES; VANADIUM OXIDES;

FABRICATION;

EID: 85032477010     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2017.8059096     Document Type: Conference Paper

References (7)

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