메뉴 건너뛰기




Volumn 7, Issue 1, 2017, Pages

Difference in gating and doping effects on the band gap in bilayer graphene

Author keywords

[No Author keywords available]

Indexed keywords


EID: 85029299992     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/s41598-017-11822-9     Document Type: Article
Times cited : (18)

References (44)
  • 1
    • 0001547961 scopus 로고
    • Metal-insulator transition in a doped semiconductor
    • Rosenbaum, T. F. et al. Metal-insulator transition in a doped semiconductor. Phys. Rev. B 27, 7509-7523 (1983).
    • (1983) Phys. Rev. B , vol.27 , pp. 7509-7523
    • Rosenbaum, T.F.1
  • 3
    • 56549120610 scopus 로고    scopus 로고
    • Anderson transitions
    • Evers, F. & Mirlin, A. D. Anderson transitions. Rev. Mod. Phys. 80, 1355-1417 (2008).
    • (2008) Rev. Mod. Phys. , vol.80 , pp. 1355-1417
    • Evers, F.1    Mirlin, A.D.2
  • 5
    • 85015729849 scopus 로고    scopus 로고
    • Highly crystalline 2D superconductors
    • Saito, Y., Nojima, T. & Iwasa, Y. Highly crystalline 2D superconductors. Nature Rev. Mater. 2, 16094, https://doi. org/10. 1038/ natrevmats. 2016. 94 (2016).
    • (2016) Nature Rev. Mater. , vol.2 , pp. 16094
    • Saito, Y.1    Nojima, T.2    Iwasa, Y.3
  • 6
    • 79955544569 scopus 로고    scopus 로고
    • Superconductor-insulator transition in La2-xSrxCuO4 at the pair quantum resistance
    • Bollinger, A. T. et al. Superconductor-insulator transition in La2-xSrxCuO4 at the pair quantum resistance. Nature 472, 458-460 (2011).
    • (2011) Nature , vol.472 , pp. 458-460
    • Bollinger, A.T.1
  • 7
    • 33244496175 scopus 로고    scopus 로고
    • Doping a Mott insulator: Physics of high-temperature superconductivity
    • Lee, P. A., Nagaosa, N. & Wen, X.-G. Doping a Mott insulator: physics of high-temperature superconductivity. Rev. Mod. Phys. 78, 17-85 (2006).
    • (2006) Rev. Mod. Phys. , vol.78 , pp. 17-85
    • Lee, P.A.1    Nagaosa, N.2    Wen, X.-G.3
  • 8
    • 79957627090 scopus 로고    scopus 로고
    • Electrically induced ferromagnetism at room temperature in cobalt-doped titanium dioxide
    • Yamada, Y. et al. Electrically induced ferromagnetism at room temperature in cobalt-doped titanium dioxide. Science 332, 1065-1067 (2011).
    • (2011) Science , vol.332 , pp. 1065-1067
    • Yamada, Y.1
  • 9
    • 0034700461 scopus 로고    scopus 로고
    • Electric-field control of ferromagnetism
    • Ohno, H. et al. Electric-field control of ferromagnetism. Nature 408, 944-946 (2000).
    • (2000) Nature , vol.408 , pp. 944-946
    • Ohno, H.1
  • 10
    • 54949147849 scopus 로고    scopus 로고
    • Electric-field-induced superconductivity in an insulator
    • Ueno, K. et al. Electric-field-induced superconductivity in an insulator. Nature Mater. 7, 855-858 (2008).
    • (2008) Nature Mater. , vol.7 , pp. 855-858
    • Ueno, K.1
  • 11
    • 36149023971 scopus 로고
    • Dependence of the superconducting transition temperature on carrier concentration in semiconducting SrTiO3
    • Schooley, J. F. et al. Dependence of the superconducting transition temperature on carrier concentration in semiconducting SrTiO3. Phys. Rev. Lett. 14, 305-307 (1965).
    • (1965) Phys. Rev. Lett. , vol.14 , pp. 305-307
    • Schooley, J.F.1
  • 12
    • 84870172199 scopus 로고    scopus 로고
    • Superconducting dome in a gate-tuned band insulator
    • Ye, J. T. et al. Superconducting dome in a gate-tuned band insulator. Science 338, 1193-1196 (2012).
    • (2012) Science , vol.338 , pp. 1193-1196
    • Ye, J.T.1
  • 13
    • 0016049974 scopus 로고
    • Superconductivity in alkaline earth metal and Yb intercalated group VI layered dichalcogenides
    • Rao, G. V. S., Shafer, M. W., Kawarazaki, S. & Toxen, A. M. Superconductivity in alkaline earth metal and Yb intercalated group VI layered dichalcogenides. J. Solid State Chem. 9, 323-329 (1974).
    • (1974) J. Solid State Chem. , vol.9 , pp. 323-329
    • Rao, G.V.S.1    Shafer, M.W.2    Kawarazaki, S.3    Toxen, A.M.4
  • 14
    • 84938633100 scopus 로고    scopus 로고
    • Superconductivity series in transition metal dichalcogenides by ionic gating
    • Shi, W. et al. Superconductivity series in transition metal dichalcogenides by ionic gating. Sci. Rep. 5, 12534, doi:1038/srep12534 (2015).
    • (2015) Sci. Rep. , vol.5 , pp. 12534
    • Shi, W.1
  • 15
    • 84978406278 scopus 로고    scopus 로고
    • Emergence of superconductivity in (NH3)yMxMoSe2 (M: Li, Na and K)
    • Miao, X. et al. Emergence of superconductivity in (NH3)yMxMoSe2 (M: Li, Na and K). Sci. Rep. 6, 29292, doi:1038/srep29292 (2016).
    • (2016) Sci. Rep. , vol.6 , pp. 29292
    • Miao, X.1
  • 16
    • 84870178701 scopus 로고    scopus 로고
    • Superconductivity in novel BiS2-based layered superconductor LaO1-xFxBiS2
    • Mizuguchi, Y. et al. Superconductivity in novel BiS2-based layered superconductor LaO1-xFxBiS2. J. Phys. Soc. Jpn. 81, 114725 (2012).
    • (2012) J. Phys. Soc. Jpn. , vol.81 , pp. 114725
    • Mizuguchi, Y.1
  • 17
    • 85006850864 scopus 로고    scopus 로고
    • Electrostatic electron-doping yields superconductivity in LaOBiS2
    • Uesugi, E., Nishiyama, S., Goto, H., Ota, H. & Kubozono, Y. Electrostatic electron-doping yields superconductivity in LaOBiS2. Appl. Phys. Lett. 109, 252601 (2016).
    • (2016) Appl. Phys. Lett. , vol.109 , pp. 252601
    • Uesugi, E.1    Nishiyama, S.2    Goto, H.3    Ota, H.4    Kubozono, Y.5
  • 18
    • 33750162077 scopus 로고    scopus 로고
    • Asymmetry gap in the electronic band structure of bilayer graphene
    • McCann, E. Asymmetry gap in the electronic band structure of bilayer graphene. Phys. Rev. B 74, 161403(R) (2006).
    • (2006) Phys. Rev. B , vol.74 , pp. 161403
    • McCann, E.1
  • 20
    • 67149121054 scopus 로고    scopus 로고
    • Direct observation of a widely tunable bandgap in bilayer graphene
    • Zhang, Y. et al. Direct observation of a widely tunable bandgap in bilayer graphene. Nature 459, 820-823 (2009).
    • (2009) Nature , vol.459 , pp. 820-823
    • Zhang, Y.1
  • 21
    • 67649502407 scopus 로고    scopus 로고
    • Observation of an electric-field-induced band gap in bilayer graphene by infrared spectroscopy
    • Mak, K. F., Lui, C. H., Shan, J. & Heinz, T. F. Observation of an electric-field-induced band gap in bilayer graphene by infrared spectroscopy. Phys. Rev. Lett. 102, 256405 (2009).
    • (2009) Phys. Rev. Lett. , vol.102 , pp. 256405
    • Mak, K.F.1    Lui, C.H.2    Shan, J.3    Heinz, T.F.4
  • 22
    • 77957888880 scopus 로고    scopus 로고
    • Electronic transport in dual-gated bilayer graphene at large displacement fields
    • Taychatanapat, T. & Jarillo-Herrero, P. Electronic transport in dual-gated bilayer graphene at large displacement fields. Phys. Rev. Lett. 105, 166601 (2010).
    • (2010) Phys. Rev. Lett. , vol.105 , pp. 166601
    • Taychatanapat, T.1    Jarillo-Herrero, P.2
  • 23
    • 77958051334 scopus 로고    scopus 로고
    • Influence of disorder on conductance in bilayer graphene under perpendicular electric field
    • Miyazaki, H., Tsukagoshi, K., Kanda, A., Otani, M. & Okada, S. Influence of disorder on conductance in bilayer graphene under perpendicular electric field. Nano Lett. 10, 3888-3892 (2010).
    • (2010) Nano Lett. , vol.10 , pp. 3888-3892
    • Miyazaki, H.1    Tsukagoshi, K.2    Kanda, A.3    Otani, M.4    Okada, S.5
  • 24
    • 84946112356 scopus 로고    scopus 로고
    • Gap state analysis in electricfield-induced band gap for bilayer graphene
    • Kanayama, K. & Nagashio, K. Gap state analysis in electricfield-induced band gap for bilayer graphene. Sci. Rep. 5, 15789, doi:1038/ srep15789 (2015).
    • (2015) Sci. Rep. , vol.5 , pp. 15789
    • Kanayama, K.1    Nagashio, K.2
  • 25
    • 85013157973 scopus 로고    scopus 로고
    • Edge currents shunt the insulating bulk in gapped graphene
    • Zhu, M. J. et al. Edge currents shunt the insulating bulk in gapped graphene. Nat. Commun. 8, 14552, doi:1038/ncomms14552 (2017).
    • (2017) Nat. Commun. , vol.8 , pp. 14552
    • Zhu, M.J.1
  • 26
    • 84928806254 scopus 로고    scopus 로고
    • Topological valley transport at bilayer graphene domain walls
    • Ju, L. et al. Topological valley transport at bilayer graphene domain walls. Nature 520, 650-655 (2015).
    • (2015) Nature , vol.520 , pp. 650-655
    • Ju, L.1
  • 27
    • 77956337082 scopus 로고    scopus 로고
    • Charge neutrality and band-gap tuning of epitaxial graphene on SiC by molecular doping
    • Coletti, C. et al. Charge neutrality and band-gap tuning of epitaxial graphene on SiC by molecular doping. Phys. Rev. B 81, 235401 (2010).
    • (2010) Phys. Rev. B , vol.81 , pp. 235401
    • Coletti, C.1
  • 28
    • 84862944245 scopus 로고    scopus 로고
    • Single-gate bandgap opening of bilayer graphene by dual molecular doping
    • Park, J. et al. Single-gate bandgap opening of bilayer graphene by dual molecular doping. Adv. Mater. 24, 407-411 (2012).
    • (2012) Adv. Mater. , vol.24 , pp. 407-411
    • Park, J.1
  • 30
    • 80051610844 scopus 로고    scopus 로고
    • Electrically controlled adsorption of oxygen in bilayer graphene devices
    • Sato, Y., Takai, K. & Enoki, T. Electrically controlled adsorption of oxygen in bilayer graphene devices. Nano Lett. 11, 3468-3475 (2011).
    • (2011) Nano Lett. , vol.11 , pp. 3468-3475
    • Sato, Y.1    Takai, K.2    Enoki, T.3
  • 31
    • 79951915184 scopus 로고    scopus 로고
    • Controlled modulation of electronic properties of graphene by self-assembled monolayers on SiO2 substrates
    • Yan, Z. et al. Controlled modulation of electronic properties of graphene by self-assembled monolayers on SiO2 substrates. ACS Nano 5, 1535-1540 (2011).
    • (2011) ACS Nano , vol.5 , pp. 1535-1540
    • Yan, Z.1
  • 32
    • 84977073722 scopus 로고    scopus 로고
    • Carrier accumulation in graphene with electron donor/acceptor molecules
    • Akiyoshi, H. et al. Carrier accumulation in graphene with electron donor/acceptor molecules. Adv. Electron. Mater. 1, 1500073 (2015).
    • (2015) Adv. Electron. Mater. , vol.1 , pp. 1500073
    • Akiyoshi, H.1
  • 33
    • 2342639588 scopus 로고    scopus 로고
    • Control of carrier density by self-assembled monolayers in organic field-effect transistors
    • Kobayashi, S. et al. Control of carrier density by self-assembled monolayers in organic field-effect transistors. Nature Mater. 3, 317-322 (2004).
    • (2004) Nature Mater. , vol.3 , pp. 317-322
    • Kobayashi, S.1
  • 34
    • 7444220645 scopus 로고    scopus 로고
    • Electric field effect in atomically thin carbon films
    • Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666-669 (2004).
    • (2004) Science , vol.306 , pp. 666-669
    • Novoselov, K.S.1
  • 35
    • 84876549651 scopus 로고    scopus 로고
    • Electric double-layer capacitance between an ionic liquid and fewlayer graphene
    • Uesugi, E., Goto, H., Eguchi, R., Fujiwara, A. & Kubozono, Y., Electric double-layer capacitance between an ionic liquid and fewlayer graphene. Sci. Rep. 3, 01595, doi:1038/srep01595 (2013).
    • (2013) Sci. Rep. , vol.3 , pp. 01595
    • Uesugi, E.1    Goto, H.2    Eguchi, R.3    Fujiwara, A.4    Kubozono, Y.5
  • 36
    • 34547829289 scopus 로고    scopus 로고
    • Making graphene visible
    • Blake, P. et al. Making graphene visible. Appl. Phys. Lett. 91, 063124 (2007).
    • (2007) Appl. Phys. Lett. , vol.91 , pp. 063124
    • Blake, P.1
  • 37
    • 33750459007 scopus 로고    scopus 로고
    • Raman spectrum of graphene and graphene layers
    • Ferrari, A. C. et al. Raman spectrum of graphene and graphene layers. Phys. Rev. Lett. 97, 187401 (2006).
    • (2006) Phys. Rev. Lett. , vol.97 , pp. 187401
    • Ferrari, A.C.1
  • 38
    • 38849201768 scopus 로고    scopus 로고
    • Observation of electron-hole puddles in graphene using a scanning single-electron transistor
    • Martin, J. et al. Observation of electron-hole puddles in graphene using a scanning single-electron transistor. Nature Phys. 4, 144-148 (2008).
    • (2008) Nature Phys. , vol.4 , pp. 144-148
    • Martin, J.1
  • 40
    • 79961214652 scopus 로고    scopus 로고
    • Electronic transport in two-dimensional graphene
    • Sarma, S. D., Adam, S., Hwang, E. H. & Rossi, E. Electronic transport in two-dimensional graphene. Rev. Mod. Phys. 83, 407-480 (2011).
    • (2011) Rev. Mod. Phys. , vol.83 , pp. 407-480
    • Sarma, S.D.1    Adam, S.2    Hwang, E.H.3    Rossi, E.4
  • 41
    • 57049159306 scopus 로고    scopus 로고
    • Inter-layer screening length to electric field in thin graphite film
    • Miyazaki, H. et al. Inter-layer screening length to electric field in thin graphite film. Appl. Phys. Express 1, 034007 (2008).
    • (2008) Appl. Phys. Express , vol.1 , pp. 034007
    • Miyazaki, H.1
  • 42
    • 79952768731 scopus 로고    scopus 로고
    • Nonlinear screening in multilayer graphene systems
    • Kuroda, M. A., Tersoff, J. & Martyna, G. J. Nonlinear screening in multilayer graphene systems. Phys. Rev. Lett. 106, 116804 (2011).
    • (2011) Phys. Rev. Lett. , vol.106 , pp. 116804
    • Kuroda, M.A.1    Tersoff, J.2    Martyna, G.J.3
  • 43
    • 71949107282 scopus 로고    scopus 로고
    • The interlayer screening effect of graphene sheets investigated by Kelvin probe force microscopy
    • Lee, N. J. et al. The interlayer screening effect of graphene sheets investigated by Kelvin probe force microscopy. Appl. Phys. Lett. 95, 222107 (2009).
    • (2009) Appl. Phys. Lett. , vol.95 , pp. 222107
    • Lee, N.J.1
  • 44
    • 33847364563 scopus 로고    scopus 로고
    • The structure of suspended graphene sheets
    • Meyer, J. C. et al. The structure of suspended graphene sheets. Nature 446, 60-63 (2007).
    • (2007) Nature , vol.446 , pp. 60-63
    • Meyer, J.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.