Wide-bandgap solid-state circuit breakers for DC power systems: Device and circuit considerations

IEEE Transactions on Electron Devices

Volumn 62, Issue 2, 2015, Pages 294-300

  Shen, Z John ^a   Sabui, Gourab ^a   Miao, Zhenyu ^a   Shuai, Zhikang ^a,b  

^a ILLINOIS INSTITUTE OF TECHNOLOGY   (United States)

^b HUNAN UNIVERSITY   (China)

Author keywords

GaN HEMT; SiC JFET; solid state circuit breaker (SSCB); wide bandgap (WBG) semiconductors.

Indexed keywords

ENERGY GAP; GALLIUM NITRIDE; POWER CONVERTERS; POWER MARKETS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

DRAIN-SOURCE VOLTAGE; EXTERNAL POWER SUPPLIES; GAN HEMTS; MARKET OPPORTUNITIES; POWER ELECTRONIC CONVERTERS; SIC JFET; SOLID STATE CIRCUIT BREAKER; WIDE BAND GAP;

ELECTRIC CIRCUIT BREAKERS;

EID: 85027953615     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2384204     Document Type: Article

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