Comprehensive performance benchmarking of III-V and Si nMOSFETs (gate length = 13 nm) considering supply voltage and OFF-current

IEEE Transactions on Electron Devices

Volumn 62, Issue 3, 2015, Pages 713-721

  Kim, Raseong ^a   Avci, Uygar E ^a   Young, Ian A ^a  

^a INTEL CORPORATION   (United States)

Author keywords

III V semiconductor materials; MOSFET; nanoscale devices; nanowires (NWs); semiconductor device modeling.

Indexed keywords

BENCHMARKING; CAPACITANCE; CRYSTAL ORIENTATION; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; NANOWIRES; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SILICON;

CARRIER EFFECTIVE MASS; COMPREHENSIVE PERFORMANCE; II-IV SEMICONDUCTORS; MOS-FET; NANOSCALE DEVICE; NANOWIRES (NWS); PERFORMANCE COMPARISON; QUANTUM TRANSPORT SIMULATIONS;

MOSFET DEVICES;

EID: 85027950760     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2015.2388708     Document Type: Article

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