Effect of lattice constant on band-gap energy and optimization and stabilization of high-temperature inxGa1−xN QUANTUM-DOT LASERS

Journal of Russian Laser Research

Volumn 33, Issue 4, 2012, Pages 387-394

  Humayun, M A ^a   Rashid, M A ^a   Malek, F A ^a   Hussain, A N ^a  

^a UNIVERSITY MALAYSIA PERLIS   (Malaysia)

Author keywords

Band gap; InGaN; Lattice constant; Molar fraction; Quantum dot; Temperature stability

Indexed keywords

EID: 85027926533     PISSN: 10712836     EISSN: 15738760     Source Type: Journal    
DOI: 10.1007/s10946-012-9294-7     Document Type: Article

References (14)

1. Mi Zetian and Pallab Bhattacharya, IEEE J. Sel. Top. Quantum Electron., 14(4), 1171 (2008).
2. I. Alghoraibi, T. Rohel, R. Piron, et al., Appl. Phys. Lett., 91, 261105 (2007).
3. Y. Arakawa, T. Someya and K. Tachibana, “Growth and physics of nitride-based quantum dots for optoelectronics applications,” in: International Workshop on Nitride Semiconductors (Nagoya, Japan, 2000), IPAP Conf. Series (2000), Vol. 1, p. 403.
4. Y. Arakawa and H. Sakaki, Appl. Phys. Lett., 40, 939 (1982).
5. A. Salhi, G. Rain‘o, L. Fortunato, et al., IEEE J. Sel. Top. Quantum Electron., 14, 1188 (2008).
6. D. Bimberg, M. Grundmann, F. Heinrichsdorff, Thin Solid Films, 367, 235 (2000).
7. L. V. Asryan and R. A. Suris, Int. J. High Speed Electron. Syst., 12, 111 (2002).
8. S. Franchi, G. Trevisi, L. Seravalli, and P. Frigeri, Prog. Cryst. Growth Character. Mater., 47, 166 (2003).
9. J. Wu and W. Walukiewicz, Superlattices Microstruct., 34, 63 (2003).
10. S. Ruffenach, B. Maleyre, O. Briot, and B. Gil, Phys. Status Solidi (c), 2, 826 (2005).
11. N. Baer, S. Schulz, S. Schumacher, et al., Appl. Phys. Lett., 87, 231114 (2005).
12. S. Schulz, S. Schumacher, and G. Czychol, Phys. Rev. B, 73, 245327 (2006).
13. W. Walukiewicz, S. X. Li, J. Wu, et al., J. Cryst. Growth, 269, 119 (2004).
14. K. Cui, S. Fathololoumi, M. G. Kibria, et al., Nanotechnology, 23, 1 (2012).