A single electron device and circuit simulator with a new algorithm to incorporate co-tunneling

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1996, Pages 135-136

  Wasshuber, C ^a   Kosina, H ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

FREE ENERGY; PIECEWISE LINEAR TECHNIQUES; QUANTUM THEORY; SEMICONDUCTOR DEVICES; SIMULATORS; TIMING CIRCUITS; TUNNEL JUNCTIONS;

CIRCUIT SIMULATORS; CO-TUNNELING; CONSTANT VOLTAGE; LOWER ENERGIES; PIECEWISE LINEAR; QUANTUM MECHANICAL EFFECTS; SINGLE-ELECTRON DEVICES; VOLTAGE CONTROLLED VOLTAGE SOURCES;

CIRCUIT SIMULATION;

EID: 85027108349     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/TCAD.1996.6449164     Document Type: Conference Paper

References (4)

1. M. Kirihara and N. Kuwamura and K. Taniguchi and C. Hamaguchi, "Monte Carlo Study of Single-Electronic Devices", Int. Conf. on Solid State Devices and Materials, Yokohama, pp. 328-330, 1994.
2. A. Phillips and P. Price, "Monte Carlo Calculations on Hot Electron Energy Tails", AppJ. Phys. Lett., 30(10), pp. 528-530, 1977.
3. D. Averin and K. Likharev, in Mesoscopic Phenomena in Solids, edited by B. Altshuler, p. 173, 1991
4. L. Fonseca and A. Korotkov and K. Likharev and A. Odintsov, "A Numerical Study of the Dynamics and Statistics of Single Electron Systems", J. AppJ. Phys., 78(5), pp. 3238-3251, 1995.