A study of IGBT turn-off behavior and switching losses for zero-voltage and zero-current switching

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 1992, Pages 411-418

  Chen, Kerning ^a   Stuart, Thomas A ^b  

^a REM Technologies ^*  (United States)

^b UNIVERSITY OF TOLEDO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); ZERO VOLTAGE SWITCHING;

HARD SWITCHING; REVERSE CURRENTS; SWITCHING LOSS; TURN OFFS; TURN-OFF BEHAVIORS; ZERO VOLTAGE AND ZERO CURRENT SWITCHING;

ZERO CURRENT SWITCHING;

EID: 85025705801     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.1992.228381     Document Type: Conference Paper

References (5)

1. K. Chen, T. Stuart, "A 1.5kW, 200kHz DC-DC Converter Optimized for IGBTs," HFPC 1991 Conference Proceedings, pp. 265-274, Toronto, Canada, June 1991.
2. K. Chen, T. Stuart, "A 1.6kW, 110kHz DC-DC Converter Optimized for IGBTs," PESC'91 Record, pp. 139-147.
3. R. Rangan, D. Chen, J. Yang, and J. Lee, "Application of Insulated Gate Bipolar Transistor to Zero-Current Switching Converters," IEEE Transactions on Power Electronics, Vol. 4, No. 1, January 1989, pp. 2-7.
4. K. Chen, "A New Zero Current and Zero Voltage Switching Technique Optimized for IGBTs", Ph.D. Dissertation, University of Toledo, Toledo, OH, 1990.
5. IXYS Corporation, "IXYS Power MOSIGTs," publication #3000B, San Jose, CA, January 1987,