Secondary ion coincidence in highly charged ion based secondary ion mass spectroscopy for process characterization

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 1, 1999, Pages 303-305

  Hamza, Alex V ^a   Schenkel, Thomas ^a   Barnes, Alan V ^a   Schneider, Dieter H ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

COINCIDENCE METHODS; DEPOSITION; MASS SPECTROSCOPY; MULTICHARGED IONS; SECONDARY EMISSION; SILICON; SILICON OXIDES; TIME OF FLIGHT MASS SPECTROMETERS; TUNGSTEN

Indexed keywords

EID: 85024774894     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.582026     Document Type: Article

References (9)

1. M. A. Park, K. A. Gibson, L. Quinones, and E. A. Schweikert, Science SCIEAS 248, 988 (1990).
2. F. Riggi, Nucl. Instrum. Methods Phys. Res. B NIMBEU 79, 230 (1993).
3. T. Schenkel, A. V. Barnes, M. A. Briere, A. Hamza, A. Schach von Wittenau, and D. H. Schneider, Nucl. Instrum. Methods Phys. Res. B NIMBEU 125, 153 (1997).
4. C. Rühlicke, M. A. Briere, and D. Schneider, Nucl. Instrum. Methods Phys. Res. B NIMBEU 99, 528 (1995).
5. D. Schneider, M. W. Clark, B. M. Penetrante, J. McDonald, D. DeWitt, and J. N. Bardsley, Phys. Rev. A PLRAAN 44, 3119 (1991).
6. D. Schneider and M. A. Briere, Phys. Scr. PHSTBO 35, 228 (1996).
7. T. Ohba, T. Suzuki, T. Hara, Y. Furumura, and K. Wada, in Tungsten and Other Refractory Metals of VLSI Applications IV, edited by R. S. Blewer and C. M. McConica (Materials Research Society, Pittsburgh, PA, 1989), pp. 17–26.
8. T. Schenkel, A. V. Barnes, A. V. Hamza, D. H. Schneider, J. C. Banks, and B. L. Doyle, Phys. Rev. Lett. PRLTAO 80, 4325 (1998).
9. T. Schenkel, A. V. Barnes, A. V. Hamza, and D. H. Schneider, Eur. Phys. J. D EPJDF6 1, 297 (1998).