A new load-pull characterization method for microwave power transistors

IEEE MTT-S International Microwave Symposium Digest

Volumn 1976-June, Issue , 1976, Pages 218-220

  Takayama, Yoichiro ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC IMPEDANCE; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MICROWAVE GENERATION;

CHARACTERIZATION METHODS; EQUIVALENT LOAD; EXTERNAL SIGNALS; INPUT AND OUTPUTS; ITS APPLICATIONS; MEDIUM POWER; MICROWAVE POWER; OUTPUT IMPEDANCE;

POWER TRANSISTORS;

EID: 85024343374     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.1976.1123701     Document Type: Conference Paper

References (5)

1. J. M. Cusack, S. M. Perlow and B. S. Perlman, "Automatic load contour mapping for microwave power transistors", IEEE Trans. Microwave Theory Tech., vol. MTT-22, pp. 1146-1152, Dec. 1974.
2. R. J. Chaffin and W. H. Leighton, "Large-signal S-parameter characterization of UHF power transistors", in 1973 IEEE G-MTT Int. Microwave Symp., Dig. Tech. Papers, pp. 155-157.
3. E. F. Belohoubek, A. Rosen, D. M. Stevenson and A. Presser, "Hybrid integrated 10-Watt CW broad-band power source at S band", IEEE J. Solid-State Circuits, vol. SC-4, pp. 360-366, Dec. 1969.
4. A. Presser and E. F. Belohoubek, "1-2 GHz highpower linear transistor amplifier", RCA Rev., vol. 33, pp. 737-751, Dec. 1972.
5. A. Higashisaka, R. Yamamoto, Y. Takayama and M. Takeuchi, "Microwave medium-power GaAs SBFETs", to be published in 1976 Natl. Conv. of IECE (Japan).