Oxygen vacancies promoted interfacial charge carrier transfer of CdS/ZnO heterostructure for photocatalytic hydrogen generation

Journal of Colloid and Interface Science

Volumn 503, Issue , 2017, Pages 198-204

  Xie, Ying Peng ^a   Yang, Yongqiang ^b   Wang, Guosheng ^a   Liu, Gang ^b,c  

^a SHENYANG UNIVERSITY OF CHEMICAL TECHNOLOGY   (China)

^b INSTITUTE OF METAL RESEARCH   (China)

^c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Cds ZnO; Direct Z scheme; Hydrogen; Interface electron transfer; Oxygen vacancies

Indexed keywords

BINS; CADMIUM SULFIDE; CHARGE CARRIERS; CHARGE TRANSFER; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; HYDROGEN; HYDROGEN PRODUCTION; OXYGEN; PHOTOLUMINESCENCE SPECTROSCOPY;

BINARY SEMICONDUCTORS; CHARGE TRANSFER PROCESS; DIRECT Z-SCHEME; ELECTRON TRANSFER; ELECTRON TRANSFER MEDIATORS; PHOTOCATALYTIC HYDROGEN; PHOTOGENERATED CHARGE CARRIERS; SURFACE OXYGEN VACANCIES;

OXYGEN VACANCIES;

CADMIUM SULFIDE; HYDROGEN; OXYGEN; ZINC OXIDE;

AQUEOUS SOLUTION; ARTICLE; CRYSTAL STRUCTURE; ELECTRON TRANSPORT; HYDROGEN EVOLUTION; PARTICLE SIZE; PHOTOCATALYSIS; PHOTOLUMINESCENCE; PRIORITY JOURNAL; QUANTUM YIELD; SEMICONDUCTOR; STEADY STATE;

EID: 85019173624     PISSN: 00219797     EISSN: 10957103     Source Type: Journal    
DOI: 10.1016/j.jcis.2017.05.006     Document Type: Article

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