Multilevel magnetoresistive random access memory written at curie point

INTERMAG Europe 2002 - IEEE International Magnetics Conference

Volumn , Issue , 2002, Pages

  Zheng, Y K ^a   Wu, Y H ^a,b   Qiu, J J ^a   Guo, Z B ^a   Han, G C ^a   Li, K B ^a   Lu, Z Q ^a   Xie, H ^a   Luo, P ^a  

^a DATA STORAGE INSTITUTE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CURIE TEMPERATURE; DIGITAL STORAGE; MAGNETIC RECORDING; MAGNETIC STORAGE; MAGNETORESISTANCE; RANDOM ACCESS STORAGE;

CURIE POINTS; FERROMAGNETIC LAYERS; MRAM ARRAYS; RECORDING LAYERS; SINGLE LEVEL; SPIN VALVE; STORAGE DENSITIES; THREE-LEVEL;

MRAM DEVICES;

EID: 85017219759     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/INTMAG.2002.1000778     Document Type: Conference Paper

References (2)

1. Won-Cheol Jeong, Byung-ii Lee, and Seung-Ki Joo, "Three level, six state multilevel magnetoresistive RAM(MRAM)", J. Appl. Phys. 85(8), 4782-4784(1999).
2. R. S. Beech, J. A. Anderson, A. V. Pohm, and J. M. Daughton, "Curie point written magnetoresistive memory", J. Appl. Phys. 87(9), 6403-6405(2000).