Low temperature metal free growth of graphene on insulating substrates by plasma assisted chemical vapor deposition

2D Materials

Volumn 4, Issue 1, 2017, Pages

  Munoz R ^a   Munuera, C ^a   Martinez J I ^a   Azpeitia, J ^a   Gomez Aleixandre C ^a   Garcia Hernandez M ^a  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

CVD; Dielectric substrates; Graphene; Plasma; Synthesis

Indexed keywords

CALCULATIONS; CHEMICAL VAPOR DEPOSITION; CYCLOTRONS; ELECTROLYTIC REDUCTION; ELECTRON CYCLOTRON RESONANCE; GRAIN GROWTH; GRAIN SIZE AND SHAPE; NUCLEATION; PLASMA CVD; PLASMAS; QUARTZ; SYNTHESIS (CHEMICAL); TEMPERATURE;

CONSTANT TEMPERATURE; DIELECTRIC SUBSTRATES; ELECTRON CYCLOTRON RESONANCE PLASMA; INSULATING SUBSTRATES; NUCLEATION AND GROWTH; NUCLEATION DENSITIES; PLASMA ASSISTED CHEMICAL VAPOR DEPOSITION; TWO STEP DEPOSITIONS;

GRAPHENE;

EID: 85014288778     PISSN: None     EISSN: 20531583     Source Type: Journal    
DOI: 10.1088/2053-1583/4/1/015009     Document Type: Article

References (57)

1. Geim A K and Novoselov K S 2007 The rise of graphene Nat. Mater. 6 183
2. Castro Neto A H, Guinea F, Peres N M R, Novoselov K S and Geim A K 2009 The electronic properties of graphene Rev. Mod. Phys. 81 109
3. Bae S et al 2010 Roll-to-roll production of 30-inch graphene films for transparent electrodes Nat. Nanotech. 5 574
4. Schwierz F 2010 Graphene transistors Nat. Nanotechnol. 5 487
5. Ferrari A C et al 2015 Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems Nanoscale 7 4598
6. Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666
7. Morozov S V, Novoselov K S, Katsnelson M I, Schedin F, Elias D C, Jaszczak J A and Geim A K 2008 Giant intrinsic carrier mobilities in graphene and its bilayer Phys. Rev. Lett. 100 016602
8. Chen X, Wua B and Liu Y 2016 Direct preparation of high quality graphene on dielectric substrates Chem. Soc. Rev. 45 2057
9. Sun J, Lindvall N, Cole M T, Teo K B K and Yurgens A 2011 Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride Appl. Phys. Lett. 98 252107
10. Chen J, Guo Y, Wen Y, Huang L, Xue Y, Geng D, Wu B, Luo B, Yu G and Liu Y 2013 Two-stage metal-catalyst-free growth of high-quality polycrystalline graphene films on silicon nitride substrates Adv. Mater. 25 992
11. Hwang J et al 2013 van der Waals epitaxial growth of graphene on sapphire by chemical vapor deposition without a metal catalyst ACS Nano 7 385
12. Song H J, Son M, Park C, Lim H, Levendorf M P, Tsen A W, Park J and Choi H C 2012 Large scale metal-free synthesis of graphene on sapphire and transfer-free device fabrication Nanoscale 4 3050
13. Jerng S K, Yu D S, Kim Y S, Ryou J, Hong S, Kim C, Yoon S, Efetov D K, Kim P and Chun S H 2011 Nanocrystalline graphite growth on sapphire by carbon molecular beam epitaxy J. Phys. Chem. C 115 4491
14. Sun J, Lindvall N, Cole M T, Wang T, Booth T J, Boggild P, Teo K B K, Liu J and Yurgens A 2012 Controllable chemical vapor deposition of large area uniform nanocrystalline graphene directly on silicon dioxide J. Appl. Phys. 111 044103
15. Chen J, Wen Y, Guo Y, Wu B, Huang L, Xue Y, Geng D, Wang D, Yu G and Liu Y 2011 Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates J. Am. Chem. Soc. 133 17548
16. Chen J et al 2014 Near-equilibrium chemical vapor deposition of high-quality single-crystal graphene directly on various dielectric substrates Adv. Mater. 26 1348
17. Ding X, Ding G, Xie X, Huang F and Jiang M 2011 Direct growth of few layer graphene on hexagonal boron nitride by chemical vapor deposition Carbon 49 2522
18. Rümmeli M H, Bachmatiuk A, Scott A, Börrnert F, Warner J H, Hoffman V, Lin J, Cuniberti G and Büchner B 2010 Direct low-temperature nanographene CVD synthesis over a dielectric insulator ACS Nano 4 4206
19. Xiong W, Zhou Y S, Jiang L J, Sarkar A, Mahjouri-Samani M, Xie Z Q, Gao Y, Ianno N J, Jiang L and Lu Y F 2013 Single-step formation of graphene on dielectric surfaces Adv. Mater. 25 630
20. Yan Z, Peng Z, Sun Z, Yao J, Zhu Y, Liu Z, Ajayan P M and Tour J M 2011 Growth of bilayer graphene on insulating substrates ACS Nano 5 8187
21. Ismach A, Druzgalski C, Penwell S, Schwartzberg A, Zheng M, Javey A, Bokor J and Zhang Y 2010 Direct chemical vapor deposition of graphene on dielectric surfaces Nano Lett. 10 1542
22. Malesevic A, Vitchev R, Schouteden K, Volodin A, Zhang L, Van Tendeloo G, Vanhulsel A and Van Haesendonck C 2008 Synthesis of few-layer graphene via microwave plasma-enhanced chemical vapour deposition Nanotechnology 19 305604
23. Zhang L, Shi Z, Wang Y, Yang R, Shi D and Zhang G 2011 Catalyst-free growth of nanographene films on various substrates Nano Res. 4 315
24. Medina H, Lin Y-C, Jin C, Lu C-C, Yeh C-H, Huang K-P, Suenaga K, Robertson J and Chiu P-W 2012 Metal-free growth of nanographene on silicon oxides for transparent conducting applications Adv. Funct. Mater. 22 2123
25. Muñoz R and Gómez-Aleixandre C 2014 Fast and non-catalytic growth of transparent and conductive graphene-like carbon films on glass at low temperature J. Phys. D: Appl. Phys. 47 045305
26. Zhang L, Ni M, Liu D, Shi D and Zhang G 2012 Competitive growth and etching of epitaxial graphene J. Phys. Chem. C 116 26929
27. 2 Carbon 72 387
28. Wei D, Lu Y, Han C, Niu T, Chen W and Wee A T S 2013 Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices Angew. Chem. Int. Ed. 52 14121
29. Sun J et al 2015 Direct chemical vapor deposition-derived graphene glasses targeting wide ranged applications Nano Lett. 15 5846
30. Yoon S F, Tan K H, Rusli J, Ahn and Huang Q F 2000 Effect of microwave power on diamond-like carbon films deposited using electron cyclotron resonance chemical vapor deposition Diam. Relat. Mater. 9 2024
31. Horcas I, Fernández R, Gómez-Rodríguez J M, Colchero J, Gómez-Herrero J and Baro A M 2007 WSXM: a software for scanning probe microscopy and a tool for nanotechnology Rev. Sci. Instrum. 78 013705
32. NIST X-ray photoelectron spectroscopy database: (http://srdata.nist.gov/xps/)
33. Giannozzi P et al 2009 QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials J. Phys. Condens. Matter 21 395502
34. Barone V, Casarin M, Forrer D, Pavone M, Sambi M and Vittadini A 2009 Role and effective treatment of dispersive forces in materials: polyethylene and graphite crystals as test cases J. Comput. Chem. 30 934
35. Grimme S 2006 Semiempirical GGA-type density functional constructed with a long-range dispersion correction J. Comp. Chem. 27 1787
36. Zhang Y and Yang W 1998 Comment on Generalized gradient approximation made simple Phys. Rev. Lett. 80 890
37. Vanderbilt D 1990 Soft self-consistent pseudopotentials in a generalized eigenvalue formalism Phys. Rev. B 41 7892
38. Berne B J, Cicotti G and Coker D (ed) 1998 Classical and Quantum Dynamics in Condensed Phase Simulations (Singapore: World Scientific)
39. Monkhorst H J and Pack J D 1976 Special points for brillouin-zone integrations Phys. Rev. B 13 5188
40. Eddy C R Jr, Sartwell B D and Youchison D L 1991 Diamond thin film growth on silicon at temperatures between 500 and 600°C using an electron cyclotron resonance microwave plasma source Surf. Coat. Technol. 48 69
41. Yang R, Zhang L, Wang Y, Shi Z, Shi D, Gao H, Wang E and Zhang G 2010 An anisotropic etching effect in the graphene basal plane Adv. Mater. 22 4014
42. Diankov G, Neumann M and Goldhaber-Gordon D 2013 Extreme monolayer-selectivity of hydrogen-plasma reactions with graphene ACS Nano 7 1324
43. Nishijima M, Yoshinobu J, Tsuda H and Onchi M 1987 The adsorption and thermal decomposition of acetylene on Si(100) and vicinal Si(100) 9° Surf. Sci. 192 383
44. Cullis C F and Franklin N H 1964 The Pyrolysis of acetylene at temperatures from 500 to 1000°C Proc. R. Soc. A 280 139
45. Luo Z, Yu T, Kim K-J, Ni Z, You Y, Lim S, Shen Z, Wang S and Lin J 2009 Thickness-dependent reversible hydrogenation of graphene layers ACS Nano 3 1781
46. Li Q, Chou H, Zhong J-H, Liu J-Y, Dolocan A, Zhang J, Zhou Y, Ruoff R S, Chen S and Cai W 2013 Growth of adlayer graphene on cu studied by carbon isotope labeling Nano Lett. 13 486
47. 3 substrates J. Am. Chem. Soc. 136 6574
48. Koretsky C M, Sverjensky D A and Sahai N 1998 Calculating site densities of oxides and silicates from crystal structures Am. J. Sci. 298 349
49. Lee J-H et al 2014 Wafer-scale growth of single-crystal monolayer graphene on reusable hydrogen-terminated germanium Science 344 286
50. Strupinski W et al 2011 Graphene epitaxy by chemical vapor deposition on SiC Nano Lett. 11 1786
51. Nguyen V L and Lee Y H 2015 Towards wafer-scale monocrystalline graphene growth and characterization Small 11 3512
52. Yang W et al 2013 Epitaxial growth of single-domain graphene on hexagonal boron nitride Nat. Mater. 12 792
53. Tang S et al 2013 Precisely aligned graphene grown on hexagonal boron nitride by catalyst free chemical vapor deposition Sci. Rep. 3 2666
54. Zhang L, Shi Z, Liu D, Yang R, Shi D and Zhang G 2012 Vapour-phase graphene epitaxy at low temperatures Nano Res. 5 258
55. Bo Z, Yang Y, Chen J, Yu K, Yan J and Cen K 2013 Plasma-enhanced chemical vapor deposition synthesis of vertically oriented graphene nanosheets Nanoscale 5 5180
56. Elias D C 2009 Control of graphene's properties by reversible hydrogenation: evidence for graphane Science 323 610
57. De S and Coleman J N 2010 Are there fundamental limitations on the sheet resistance and transmittance of thin graphene films? ACS Nano 4 2713