A new method of the design and technology of PIN diodes

12th International Conference on Microwaves and Radar, MIKON 1998

Volumn 1, Issue , 1998, Pages 69-73

  Jablonski, W ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; RADAR;

DESIGN AND TECHNOLOGY; HIGH POWER; HIGH-POWER DEVICES; PIN DIODE; SERIES RESISTANCES;

SEMICONDUCTOR DIODES;

EID: 85013119046     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MIKON.1998.737921     Document Type: Conference Paper

References (7)

1. W. Jablohski: "Dioda PIN na pasmo X". Prace IT, 1988, vol. 11 pp. 23-30.
2. W. Jabtohski, M. Grabowski, P Szaban: "Zastosowanie warstw szklanych w konstrukcji przyrzqddw mikrofalowych przeznaczonych do pracy w wyiszych pasmach czgstotliwolci". Prace ITE, 1991, vol. 10/11, pp. 29-41.
3. W. Jabtofiski, M. Grabowski, P. Szaban: "Badania wiasnolci szkid pod kqtem ich zastosowania w przyrzqdach mikrofalowych na wysokie pasma czgstotliwolci". Prace ITE, 1993, vo1. 3, pp. 29-43.
4. W. Jabtofiski, P. Szaban: "A Practical Application of Hard Glass Layers in Microwave Chips with Beam Leads Contacts". Conf. Proceedings, MIKON 94, 2011, pp. 17-20.
5. W. Jabloriski: "The Study of Glass Application to Construction of Microwave Devices for Millimeter Wavelengths". Conf. Proceedings MIKON 94, vol. 1, pp. 282-285.
6. W:Jabtofiski, M. Grabowski: "Glass Layers in Microwave Devices". Prace ITE, 1997, VOl.-8, pp. 318-319.
7. M. Grabowski, W. Jablofiski: "PIN Diodes with Glass Passivation". Prace ITE, 1997, VOI. 2-8, pp. 316-317.