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Nanoscale

Volumn 9, Issue 5, 2017, Pages 1827-1833

Transfer-free multi-layer graphene as a diffusion barrier

(3) Mehta, R a,b Chugh, S a Chen, Z a

a PURDUE UNIVERSITY (United States)

b INTEL CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DEFECTS; DEPOSITION; DIFFUSION; FLEXIBLE ELECTRONICS; GRAIN BOUNDARIES; GRAPHENE; HEAVY IONS; IONS; PHOTOELECTROCHEMICAL CELLS; PHOTOVOLTAIC CELLS; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON OXIDES; TEMPERATURE; VAPOR DEPOSITION;

CAPACITANCE VOLTAGE MEASUREMENTS; CU DIFFUSION BARRIER; FLAT-BAND VOLTAGE SHIFT; FLEXIBLE ELECTRONIC DEVICES; HIGH DEPOSITION TEMPERATURE; INTEGRATED CIRCUIT CHIPS; LOW TEMPERATURE PLASMAS; POSITIVE BIAS TEMPERATURES;

DIFFUSION BARRIERS;

EID: 85011391152 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c6nr07637h Document Type: Article

Times cited : (47)

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