Single Crystal Growth and the High-pressure Effect of an Electronic State in UNiGa5

Journal of Nuclear Science and Technology

Volumn 39, Issue , 2002, Pages 214-216

  Nakashima, Miho ^a   Tokiwa, Yoshihumi ^a,b   Nakawaki, Hirokazu ^a   Haga, Yoshinori ^b   Uwatoko, Yoshiya ^c   Settai, Rikio ^a   Ōnuki, Yoshichika ^a,b  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Electrical resistivity; Pressure effect; Quantum critical point; Single crystal; UNiGa5

Indexed keywords

EID: 85010526695     PISSN: 00223131     EISSN: None     Source Type: Journal    
DOI: 10.1080/00223131.2002.10875447     Document Type: Article

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