-
1
-
-
0002449384
-
Discrete energy level separation and the threshold temperature dependence of quantum dot lasers
-
O. B. Shchekin, P. Gyoungwon, D. L. Huffaker, and D. G. Deppe, “Discrete energy level separation and the threshold temperature dependence of quantum dot lasers,” Appl. Phys. Lett., vol. 77, no. 4, pp. 466–468, Jul. 24, 2000.
-
(2000)
Appl. Phys. Lett.
, vol.77
, Issue.4
, pp. 466-468
-
-
Shchekin, O.B.1
Gyoungwon, P.2
Huffaker, D.L.3
Deppe, D.G.4
-
2
-
-
0033885261
-
On the dimensionality of optical absorption, gain, and recombination in quantum-confined structures
-
P. Blood, “On the dimensionality of optical absorption, gain, and recombination in quantum-confined structures,” IEEE J. Quantum Electron., vol. 36, no. 3, pp. 354–362, Mar. 2000.
-
(2000)
IEEE J. Quantum Electron.
, vol.36
, Issue.3
, pp. 354-362
-
-
Blood, P.1
-
3
-
-
0036455743
-
Quantum dot laser diodes: Physics, progress and potential
-
P. Blood, “Quantum dot laser diodes: Physics, progress and potential,” in Conf. Lasers Electro-Optics (CLEO), May 19–24, 2002, vol. 1, pp. 555–556.
-
(2002)
Conf. Lasers Electro-Optics (CLEO)
, vol.1
, pp. 555-556
-
-
Blood, P.1
-
4
-
-
84964412579
-
Lasing characteristics of coupled InGaAs/GaAs multi-layers quantum dots laser
-
Y. Ning, X. Gao, L. Wang, P. Smowton, and P. Blood, “Lasing characteristics of coupled InGaAs/GaAs multi-layers quantum dots laser,” in Proc. 6th Int. Conf. Solid-State Integrated-Circuit Technology, Oct. 22–25, 2001, vol. 2, pp. 1249–1251.
-
(2001)
Proc. 6th Int. Conf. Solid-State Integrated-Circuit Technology
, vol.2
, pp. 1249-1251
-
-
Ning, Y.1
Gao, X.2
Wang, L.3
Smowton, P.4
Blood, P.5
-
5
-
-
0034841535
-
Self-organized InGaAs quantum dots for advanced applications in optoelectronics
-
N. N. Ledentsov, D. Bimberg, V. M. Ustinov, Z. I. Alferov, and J. A. Lott, “Self-organized InGaAs quantum dots for advanced applications in optoelectronics,” in IEEE Int. Conf. Indium Phosphide Related Materials (IPRM 2001). May 14–18. 2001. pp. 5–8.
-
(2001)
IEEE Int. Conf. Indium Phosphide Related Materials (IPRM 2001).
, pp. 14-18
-
-
Ledentsov, N.N.1
Bimberg, D.2
Ustinov, V.M.3
Alferov, Z.I.4
Lott, J.A.5
-
6
-
-
33646190265
-
Spectral and threshold performance of patterned quantum dot lasers
-
V. C. Elarde and J. J. Coleman, “Spectral and threshold performance of patterned quantum dot lasers,” Phys. Stat. Sol. (c), vol. 3, pp. 508–511, 2006.
-
(2006)
Phys. Stat. Sol. (c)
, vol.3
, pp. 508-511
-
-
Elarde, V.C.1
Coleman, J.J.2
-
7
-
-
27144522376
-
High performance laser with nanopatterned active layer by selective area epitaxy
-
no. 20. pp.
-
V. C. Elarde, A. C. Bryce, and J. J. Coleman, “High performance laser with nanopatterned active layer by selective area epitaxy,” Electron. Lett., vol. 41. no. 20. pp. 1122–1124. Sep. 2005.
-
(2005)
Electron. Lett.
, vol.41
, pp. 1122-1124
-
-
Elarde, V.C.1
Bryce, A.C.2
Coleman, J.J.3
-
8
-
-
9844270057
-
Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth
-
V. C. Elarde, T. S. Yeoh, R. Rangarajan, and J. J. Coleman, “Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth,” J. Cryst. Growth, vol. 272, pp. 148–153, 2004.
-
(2004)
J. Cryst. Growth
, vol.272
, pp. 148-153
-
-
Elarde, V.C.1
Yeoh, T.S.2
Rangarajan, R.3
Coleman, J.J.4
|