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Volumn 20, Issue 4, 2008, Pages 240-242

A Novel Ordered Nanopore Array Diode Laser

Author keywords

Diode laser; nanopore; periodic perturbation; quantization; semiconductor laser

Indexed keywords


EID: 85008060375     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/LPT.2007.912978     Document Type: Article
Times cited : (30)

References (8)
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    • (2000) Appl. Phys. Lett. , vol.77 , Issue.4 , pp. 466-468
    • Shchekin, O.B.1    Gyoungwon, P.2    Huffaker, D.L.3    Deppe, D.G.4
  • 2
    • 0033885261 scopus 로고    scopus 로고
    • On the dimensionality of optical absorption, gain, and recombination in quantum-confined structures
    • P. Blood, “On the dimensionality of optical absorption, gain, and recombination in quantum-confined structures,” IEEE J. Quantum Electron., vol. 36, no. 3, pp. 354–362, Mar. 2000.
    • (2000) IEEE J. Quantum Electron. , vol.36 , Issue.3 , pp. 354-362
    • Blood, P.1
  • 3
    • 0036455743 scopus 로고    scopus 로고
    • Quantum dot laser diodes: Physics, progress and potential
    • P. Blood, “Quantum dot laser diodes: Physics, progress and potential,” in Conf. Lasers Electro-Optics (CLEO), May 19–24, 2002, vol. 1, pp. 555–556.
    • (2002) Conf. Lasers Electro-Optics (CLEO) , vol.1 , pp. 555-556
    • Blood, P.1
  • 6
    • 33646190265 scopus 로고    scopus 로고
    • Spectral and threshold performance of patterned quantum dot lasers
    • V. C. Elarde and J. J. Coleman, “Spectral and threshold performance of patterned quantum dot lasers,” Phys. Stat. Sol. (c), vol. 3, pp. 508–511, 2006.
    • (2006) Phys. Stat. Sol. (c) , vol.3 , pp. 508-511
    • Elarde, V.C.1    Coleman, J.J.2
  • 7
    • 27144522376 scopus 로고    scopus 로고
    • High performance laser with nanopatterned active layer by selective area epitaxy
    • no. 20. pp.
    • V. C. Elarde, A. C. Bryce, and J. J. Coleman, “High performance laser with nanopatterned active layer by selective area epitaxy,” Electron. Lett., vol. 41. no. 20. pp. 1122–1124. Sep. 2005.
    • (2005) Electron. Lett. , vol.41 , pp. 1122-1124
    • Elarde, V.C.1    Bryce, A.C.2    Coleman, J.J.3
  • 8
    • 9844270057 scopus 로고    scopus 로고
    • Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth
    • V. C. Elarde, T. S. Yeoh, R. Rangarajan, and J. J. Coleman, “Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth,” J. Cryst. Growth, vol. 272, pp. 148–153, 2004.
    • (2004) J. Cryst. Growth , vol.272 , pp. 148-153
    • Elarde, V.C.1    Yeoh, T.S.2    Rangarajan, R.3    Coleman, J.J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.