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Volumn 8, Issue 9, 1996, Pages 1276-1277

Comments on “Lasing at Three-Dimensionally Quantum-Confined Sublevel of Self-Organized In0.5Ga0.5 As Quantum Dots by Current Injection”

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EID: 85008036041     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.531861     Document Type: Note
Times cited : (4)

References (13)
  • 2
    • 24544447747 scopus 로고
    • Near 1.3 µm high-intensity photoluminescence at room temperature ny InAs/GaAs multi-coupled quantum dots
    • A. Takeuchi, Y. Nakata, S. Muto, Y. Sugiyama, T. Iwata, and N. Yokoyama, “Near 1.3 µm high-intensity photoluminescence at room temperature ny InAs/GaAs multi-coupled quantum dots,” Jpn. J. Appl. Phys., vol. 34, pp. L405-L407, 1995.
    • (1995) Jpn. J. Appl. Phys. , vol.34 , pp. L405-L407
    • Takeuchi, A.1    Nakata, Y.2    Muto, S.3    Sugiyama, Y.4    Iwata, T.5    Yokoyama, N.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.