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1
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0028499029
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Low threshold, large TO injection laser emission from (InGa) As quantum dots
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N. Kirstaedter, N.N. Ledentsov, M. Grundmann, D. Bimberg, U. Richter, S.S. Ruvimov, P. Werner, J. Heydenreich, V.M. Ustinov, M.V. Maximov, P.S. Kop'ev, and Zh. I. Alferov, “Low threshold, large TO injection laser emission from (InGa) As quantum dots,” Electron. Lett., vol. 30, pp. 1416-1417, 1994.
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Electron. Lett.
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Kirstaedter, N.1
Ledentsov, N.N.2
Grundmann, M.3
Bimberg, D.4
Richter, U.5
Ruvimov, S.S.6
Werner, P.7
Heydenreich, J.8
Ustinov, V.M.9
Maximov, M.V.10
Kop'ev, P.S.11
Alferov, Z.I.12
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2
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24544447747
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Near 1.3 µm high-intensity photoluminescence at room temperature ny InAs/GaAs multi-coupled quantum dots
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A. Takeuchi, Y. Nakata, S. Muto, Y. Sugiyama, T. Iwata, and N. Yokoyama, “Near 1.3 µm high-intensity photoluminescence at room temperature ny InAs/GaAs multi-coupled quantum dots,” Jpn. J. Appl. Phys., vol. 34, pp. L405-L407, 1995.
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Takeuchi, A.1
Nakata, Y.2
Muto, S.3
Sugiyama, Y.4
Iwata, T.5
Yokoyama, N.6
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3
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0029509799
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1.3 µm photoluminescence fron InGaAs quantum dots on GaAs
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R. P. Mirin, J. P. Ibbetson, K. Nishi, A. C. Gossard, and J. E. Bowers “1.3 µm photoluminescence fron InGaAs quantum dots on GaAs,” Appl. Phys. Lett., vol. 67, pp. 3795-3797, 1995.
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Mirin, R.P.1
Ibbetson, J.P.2
Nishi, K.3
Gossard, A.C.4
Bowers, J.E.5
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4
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84894020248
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0.5 As quantum dots on GaAs substrates emitting at 1.3 µm
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0.5 As quantum dots on GaAs substrates emitting at 1.3 µm,” Jpn. J. Appl. Phys., vol. 33, pp. L1710-Ll712, 1994.
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Mukai, K.1
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Sugiwara, M.3
Yamaaaki, S.4
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5
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4244115357
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Ultranarrow luminescence lines from single quantum dots
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M. Grundmann, J. Christen, N. N. Ledentsov, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, and Zh. I. Alferov, “Ultranarrow luminescence lines from single quantum dots,” Phys. Rev. Lett., vol. 74, pp. 4043-4046, 1995.
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Grundmann, M.1
Christen, J.2
Ledentsov, N.N.3
Böhrer, J.4
Bimberg, D.5
Ruvimov, S.S.6
Werner, P.7
Richter, U.8
Gösele, U.9
Heydenreich, J.10
Ustinov, V.M.11
Egorov, A.Y.12
Zhukov, A.E.13
Kop'ev, P.S.14
Alferov, Z.I.15
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6
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85008041468
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InAs-GaAs quantum dot lasers: in situ growth, radiative lifetimes and polarization properties
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Osaka, Japan, Aug. 21-24
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D. Bimberg, N. N. Ledentsov, N. Kirstaedter, O. Schmidt, M. Grundmann, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, M. V. Maximov, P. S. Kop'ev. Zh. I. Alferov, S. S. Ruvimov, U. Gösele, and J. Heydenreich, “InAs-GaAs quantum dot lasers: in situ growth, radiative lifetimes and polarization properties,” Extended Abstracts of the 1995 Int. Conf. Solid Statellevices and Mater., Osaka, Japan, Aug. 21-24, 1995, pp. 716-718.
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(1995)
Extended Abstracts of the 1995 Int. Conf. Solid Statellevices and Mater.
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Bimberg, D.1
Ledentsov, N.N.2
Kirstaedter, N.3
Schmidt, O.4
Grundmann, M.5
Ustinov, V.M.6
Egorov, A.Y.7
Zhukov, A.E.8
Maximov, M.V.9
Kop'ev, P.S.10
Alferov, Z.I.11
Ruvimov, S.S.12
Gösele, U.13
Heydenreich, J.14
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7
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0029493265
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Static and dynamic properties of (InGa)As/GaAs quantum dot lasers
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San Francisco, CA
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N. Kirstaedter, O. Schmidt, N. N. Ledentsov, M. Grundmann, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, M. V. Maximov, P. S. Kop'ev, Zh. I. Alferov, A. O. Kosogov, U. Gösele, and J. Heydenreich, “Static and dynamic properties of (InGa)As/GaAs quantum dot lasers.” in Proc. 8th Annu. Meet. of IEEE Lasers and Electro-Opt. Soc., San Francisco, CA, vol. 1, 1995, pp. 290-295.
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(1995)
Proc. 8th Annu. Meet. of IEEE Lasers and Electro-Opt. Soc.
, vol.1
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Kirstaedter, N.1
Schmidt, O.2
Ledentsov, N.N.3
Grundmann, M.4
Bimberg, D.5
Ustinov, V.M.6
Egorov, A.Y.7
Zhukov, A.E.8
Maximov, M.V.9
Kop'ev, P.S.10
Alferov, Z.I.11
Kosogov, A.O.12
Gösele, U.13
Heydenreich, J.14
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8
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0000197844
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Low threshold current density Injection heterolaser based on self-organized quantum dots formed by metal-organic vapor phase deposition
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(translated in Semiconductors, vol. 30, 1996).
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Zh. I. Alferov, N. Yu. Gordeev, S. V. Zaitsev, P. S. Kop'ev, I. V. Kochnev, V. V. Komin, I. L. Krestnikov, N. N. Ledentsov, A. V. Lunev, M. V. Maximov, S. S. Ruvimov, A. V. Sakharov, A. F. Tsatsulnikov, Yu. M. Shernyakov, and D. Bimberg, “Low threshold current density Injection heterolaser based on self-organized quantum dots formed by metal-organic vapor phase deposition,” Fizika i Tekhn. Poluprovodn., vol. 30, pp. 357-363, 1996 (translated in Semiconductors, vol. 30, 1996).
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(1996)
Fizika i Tekhn. Poluprovodn.
, vol.30
, pp. 357-363
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Alferov, Z.I.1
Gordeev, N.Y.2
Zaitsev, S.V.3
Kop'ev, P.S.4
Kochnev, I.V.5
Komin, V.V.6
Krestnikov, I.L.7
Ledentsov, N.N.8
Lunev, A.V.9
Maximov, M.V.10
Ruvimov, S.S.11
Sakharov, A.V.12
Tsatsulnikov, A.F.13
Shernyakov, Y.M.14
Bimberg, D.15
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9
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36449004218
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Excited states in self-organized InAs quantum dots: Theory and experiment
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M. Grundmann, N. N. Ledentsov, O. Stier, D. Bimberg, V. M. Ustinov, P. S. Kop'ev, and Zh. I. Alferov, “Excited states in self-organized InAs quantum dots: Theory and experiment,” Appl. Phys. Lett., vol. 68, pp. 979-981, 1996.
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(1996)
Appl. Phys. Lett.
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Grundmann, M.1
Ledentsov, N.N.2
Stier, O.3
Bimberg, D.4
Ustinov, V.M.5
Kop'ev, P.S.6
Alferov, Z.I.7
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10
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0002136990
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Injection heterolaser based on vertically-coupled quantum dots in a GaAs matrix
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(translated in Semiconductors, vol. 30, 1996)
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Zh. I. Alferov, N. A. Bert, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, I. L. Krestnikov, N. N. Ledentsov, A. V. Lunev, M. V. Maximov, A. V. Sakharov, V. M. Ustinov, A. F. Tsatsulnikov, Yu. M. Shernyakov, and D. Bimberg, “Injection heterolaser based on vertically-coupled quantum dots in a GaAs matrix,” Fizika i Tekhn. Poluprovodn., vol. 30, pp. 351-356, 1996 (translated in Semiconductors, vol. 30, 1996)
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(1996)
Fizika i Tekhn. Poluprovodn.
, vol.30
, pp. 351-356
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Alferov, Z.I.1
Bert, N.A.2
Egorov, A.Y.3
Zhukov, A.E.4
Kop'ev, P.S.5
Krestnikov, I.L.6
Ledentsov, N.N.7
Lunev, A.V.8
Maximov, M.V.9
Sakharov, A.V.10
Ustinov, V.M.11
Tsatsulnikov, A.F.12
Shernyakov, Y.M.13
Bimberg, D.14
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11
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0000669973
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Magneto-optical studies in ultrathin InAs-GaAs quantum wells
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P. D. Wang, N. N. Ledentsov, C. M. Sotomayor Torres, I. N. Yassievich. A. Pakhomov, A. Yu. Egorov, P. S. Kop'ev, and V. M. Ustinov, “Magneto-optical studies in ultrathin InAs-GaAs quantum wells,” Phys.Rev. B, vol. 50, pp. 1604-1610, 1994.
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Wang, P.D.1
Ledentsov, N.N.2
Sotomayor, C.M.3
Torres, I.4
Yassievich, N.5
Pakhomov, A.6
Egorov, A.Y.7
Kop'ev, P.S.8
Ustinov, V.M.9
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12
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0001607112
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Luminescence and structural properties of (In,Ga)As-GaAs quantum dots
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Vancouver, Canada, July, Ed. D.J. Lockwood. Singapore: World Scientific
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N. N. Ledentsov, M. Grundmann, N. Kirstaedter, J. Christen, R. Heitz, J. Bohrer, F. Heinrichsdorff, D. Bimberg, S. S. Ruvimov, P. Werner, U. Richter, U. Gosele, J. Heydenreich, V. M. Ustinov, A. Yu. Egorov, M. V. Maximov, P. S. Kop'ev, and Zh. I. Alferov, “Luminescence and structural properties of (In,Ga)As-GaAs quantum dots,” in Proc. 22nd Int. Conf. Phys. ojSemiconduct., Vancouver, Canada, July 1994, Ed. D.J. Lockwood. Singapore: World Scientific, 1995, pp. 1855-1858, vol. 3.
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, pp. 1855-1858
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Ledentsov, N.N.1
Grundmann, M.2
Kirstaedter, N.3
Christen, J.4
Heitz, R.5
Bohrer, J.6
Heinrichsdorff, F.7
Bimberg, D.8
Ruvimov, S.S.9
Werner, P.10
Richter, U.11
Gosele, U.12
Heydenreich, J.13
Ustinov, V.M.14
Egorov, A.Y.15
Maximov, M.V.16
Kop'ev, P.S.17
Alferov, Z.I.18
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13
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0001429563
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Structural characterization of (In,Ga)As quantum dots in a GaAs matrix
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S. S. Ruvimov, P. Werner, K. Scheerschmidt, U. Gosele, J. Heydenreick, U. Richter, N. N. Ledentsov, M. Grundmann, D. Bimberg, V. M. Ustinov, A. Yu. Eeorov. P. S. Kou'ev. and Zh. I. Alferov. “Structural characterization of (In,Ga)As quantum dots in a GaAs matrix,” Phys. Rev. B, vol. 51, pp. 14766-14769, 1995.
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(1995)
Phys. Rev. B
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, pp. 14766-14769
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Ruvimov, S.S.1
Werner, P.2
Scheerschmidt, K.3
Gosele, U.4
Heydenreick, J.5
Richter, U.6
Ledentsov, N.N.7
Grundmann, M.8
Bimberg, D.9
Ustinov, V.M.10
Eeorov, A.Y.11
Kou'ev, P.S.12
Alferov, Z.I.13
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