Comparison of Thermal-Shunt and Flip-Chip HBT Thermal Impedances: Comment on “Novel HBT with Reduced Thermal Impedance”

IEEE Microwave and Guided Wave Letters

Volumn 6, Issue 7, 1996, Pages 268-269

  Anholt, R ^b   Bozada, C ^a   Dettmer, R ^a   Sewell, J ^a   Via, D ^a   Barrette, J ^a   Ebel, J ^a   DeSalvo, G ^a   Havasy, C ^a   Liou, L ^a   Quach, T ^a   Gillespie, J ^a   Pettiford, C ^a   Ito, C ^a   Nakano, K ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b Gateway Modeling Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85008031219     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.502289     Document Type: Article

References (6)

1. B. Bayraktaroglu, J. Barrette, L. Kehias, C. I. Huang, R. Fitch, R. Neidhard, and R. Scherer, “Very high-power-density CW operation of GaAs/AlCaAs microwave heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. 14, no. 10, pp. 493-495, Oct. 1993.
2. G. Jackson, D. Teeter, D. Bradford, and M. Cobb, “A scalable MMIC compatible power HBT,” in '95 IEEE MTTS Int. Microwave Symp. Dig., 1995, pp. 457-460.
3. T. Shimura, M. Sakai, A. Inoue, S. Izumi, H. Matsuoka, J. Udomoto, K. Kosaki, T. Kuragaki, R. Hattori, H. Takano, T. Sonoda, S. Takamiya, and S. Mitsui, “1 W Ku-band AlGaAdGaAs power HBT's with 72% peak power-added efficiency,” in '4 IEEE MU-S Int. Microwave Symp. Dig., 1994, pp. 687-690.
4. D. Dawson, “Thermal modeling, measurements, and design considerations of GaAs devices and MMIC's,” in '94 IEEE GaAs IC Symp. Dig., 1994, pp. 285-290.
5. R. Anholt, Electrical and Thermal Characterization of MESFET's, HEMT's, and HBT's.
6. R. Dettmer, T. Jenkins, C. Bozada, J. Sewell, D. Via, R. Anholt, unpublished.