Magnetic and electrical properties of magnetic tunnel junctions with radical oxidized MgO barriers

IEEE Transactions on Magnetics

Volumn 42, Issue 10, 2006, Pages 2642-2644

  Oh, S C ^a   Jeong, J H ^a   Nam, K T ^a   Lee, J E ^a   Park, S O ^a   Kim, H S ^a   Chung, U I ^a   Moon, J T ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Magnetic tunnel junction; MgO; radical oxidation

Indexed keywords

EID: 85008020140     PISSN: 00189464     EISSN: 19410069     Source Type: Journal    
DOI: 10.1109/TMAG.2006.881276     Document Type: Article

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