Thickness dependent interlayer transport in vertical MoS2 Josephson junctions

2D Materials

Volumn 3, Issue 3, 2016, Pages

  Island, Joshua O ^a   Steele, Gary A ^a   Van Der Zant, Herre S J ^a   Castellanos Gomez, Andres ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b INSTITUTO MADRILEÑO DE ESTUDIOS AVANZADOS EN NANOCIENCIA IMDEA NANOCIENCIA   (Spain)

Author keywords

Andreev reflection; Josephson junction; Molybdenum disulfide; MoS2; Thickness dependence; Tunnel barrier; Vertical junction

Indexed keywords

BINARY ALLOYS; JOSEPHSON JUNCTION DEVICES; LAYERED SEMICONDUCTORS; QUANTUM OPTICS; SULFUR COMPOUNDS;

ANDREEV REFLECTION; JOSEPHSON-JUNCTION; MOLYBDENUM DISULFIDE; MOS2; THICKNESS DEPENDENCE; TUNNEL BARRIER; VERTICAL JUNCTIONS;

MOLYBDENUM COMPOUNDS;

EID: 84992358093     PISSN: None     EISSN: 20531583     Source Type: Journal    
DOI: 10.1088/2053-1583/3/3/031002     Document Type: Article

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