Sub-0.10 um hole fabrication using bi-layer silylation process for 193 nm lithography

1999 International Microprocesses and Nanotechnology Conference

Volumn , Issue , 1999, Pages 80-81

  Satou, I ^a   Kuhara, K ^a   Endo, M ^a   Morimoto, H ^a  

^a Semiconductor Leading Edge TechnoIogies   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NANOTECHNOLOGY;

193-NM LITHOGRAPHY; BI-LAYER; BIASING TECHNIQUES; HOLE FABRICATION; KEY TECHNOLOGIES; SHORTER WAVELENGTH; SILYLATIONS;

FABRICATION;

EID: 84992276938     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMNC.1999.797486     Document Type: Conference Paper

References (0)