Defect Engineering of Bismuth Oxyiodide by IO3- Doping for Increasing Charge Transport in Photocatalysis

ACS Applied Materials and Interfaces

Volumn 8, Issue 41, 2016, Pages 27859-27867

  Huang, Yongchao ^a   Li, Haibo ^a   Fan, Wenjie ^a   Zhao, Fengyi ^a   Qiu, Weitao ^a   Ji, Hongbing ^a   Tong, Yexiang ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

bismuth oxyhalide; charge transport; IO3 doping; oxygen vacancy; photocatalysis

Indexed keywords

AZO DYES; BISMUTH; CATALYSIS; CHARGE TRANSFER; DEFECTS; NANOSHEETS; OXYGEN; PHOTOCATALYSIS; PHOTODEGRADATION; SURFACE DEFECTS; VACANCIES;

BISMUTH OXYIODIDE; CHARGE CARRIER DYNAMICS; CHEMICAL AND PHYSICAL PROPERTIES; CYCLING STABILITY; DEFECT ENGINEERING; GASEOUS FORMALDEHYDE; PHOTOCATALYTIC ACTIVITIES; VISIBLE-LIGHT IRRADIATION;

OXYGEN VACANCIES;

EID: 84992212925     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.6b10653     Document Type: Article

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