Light Emission from Silicon Nanostructures Produced by Conventional Lithographic and Reactive Ion Etching Techniques

physica status solidi (b)

Volumn 190, Issue 1, 1995, Pages 91-95

  Nassiopoulos, A G ^a   Grigoropoulos, S ^a   Papadimitriou, D ^b   Gocolides, E ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84990652277     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.2221900114     Document Type: Article

References (12)

1. Self-limiting oxidation of Si nanowires
2. Visible luminescence from one- and two-dimensional silicon structures produced by conventional lithographic and reactive ion etching techniques
3. Micro‐and Nano‐Engineering Conf., Davos 1994