Study on Ar(5%H2) Plasma Pretreatment for Cu/Sn/Cu Solid-State-Diffusion Bonding in 3D Interconnection

Proceedings - Electronic Components and Technology Conference

Volumn 2016-August, Issue , 2016, Pages 1765-1771

  Wang, Junqiang ^a,b   Wang, Qian ^a   Wang, Dejun ^b   Cai, Jian ^a,c  

^a TSINGHUA UNIVERSITY   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^c TSINGHUA NATIONAL LABORATORY FOR INFORMATION SCIENCE AND TECHNOLOGY   (China)

Author keywords

3D interconnection; Plasma pretreatment; Solid state diffusion (SSD) bonding; Surface activation

Indexed keywords

CONTACT ANGLE; DIFFUSION; DIFFUSION IN SOLIDS; NETWORK COMPONENTS; TIN; WAFER BONDING;

3D INTERCONNECTION; AFTER HIGH TEMPERATURE; ANNEALING PROCESS; BONDING PERFORMANCE; PLASMA PRE-TREATMENT; SOLID-STATE DIFFUSION; SURFACE ACTIVATION; SURFACE ACTIVITIES;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84987791151     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2016.110     Document Type: Conference Paper

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