Design and fabrication of memory devices based on nanoscale polyoxometalate clusters

Nature

Volumn 515, Issue 7528, 2014, Pages 545-549

  Busche, Christoph ^a   Vilà Nadal, Laia ^a   Yan, Jun ^a   Miras, Haralampos N ^a   Long, De Liang ^a   Georgiev, Vihar P ^a   Asenov, Asen ^a   Pedersen, Rasmus H ^a   Gadegaard, Nikolaj ^a   Mirza, Muhammad M ^a   Paul, Douglas J ^a   Poblet, Josep M ^b   Cronin, Leroy ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b UNIVERSITAT ROVIRA I VIRGILI   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

NANOMATERIAL; OXIDE; SELENIUM DERIVATIVE; TUNGSTEN DERIVATIVE;

CHEMICAL BONDING; CONDUCTIVITY; DESIGN; ELECTRICAL CONDUCTIVITY; ELECTRICAL METHOD; EQUIPMENT; MOLECULAR ANALYSIS; OXIDATION; PERFORMANCE ASSESSMENT; SELENIUM;

ARTICLE; CHEMICAL BOND; DATA STORAGE DEVICE; EMBEDDING; MOLECULE; NANOFABRICATION; OXIDATION; PRIORITY JOURNAL; SIMULATION;

EID: 84987789205     PISSN: 00280836     EISSN: 14764687     Source Type: Journal    
DOI: 10.1038/nature13951     Document Type: Article

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