Bubble Formation in Oxide Scales on SiC

Journal of the American Ceramic Society

Volumn 67, Issue 1, 1984, Pages C‐17-C‐18

  Mieskowski, Diane M ^a   Mitchell, T E ^a   Heuer, A H ^a  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84987349311     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1984.tb19160.x     Document Type: Article

References (14)

1. Oxidation Behavior of Silicon Carbide
2. Oxidation of Silicon Carbide in the Temperature Range 1200°C to 1500°C
3. Oxidation of Silicon Carbide
4. Oxidation Kinetics of Hot‐Pressed Silicon Carbide
5. On the Rates of Oxidation of Silicon and Silicon Carbide in Oxygen, and Correlation with Permeability of Silica Glass
6. Oxidation Kinetics of Silicon Ceramic From the View Point of Refractory Materials Against Hot Corrosion
7. Oxidation of Silicon Carbide
8. Oxidation Behavior of Hot‐Pressed Silicon Carbide
9. An Application of EELS in the Examination of Inclusions and Grain Boundaries of a SiC Ceramic