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Advanced Ceramic Materials

Volumn 3, Issue 6, 1988, Pages 590-594

Formation and Transportation of Intergranular and Nodular Fine‐Grained β‐SiC in Reaction‐Sintered SiC

(2) LIM, CHANG‐BIN a ISEKI, TAKAYOSHI a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84985053345 PISSN: 08835551 EISSN: 15512916 Source Type: Journal
DOI: 10.1111/j.1551-2916.1988.tb00284.x Document Type: Article

Times cited : (16)

References (17)

1
- 0000072507
- Special Ceramics, pp., Heywood, London
- (1960) The Preparation of Dense Self‐Bonded Silicon Carbide , pp. 209-219
- Popper, P.¹

2
- 0002238881
- The Fabrication and Properties of Self‐Bonded Silicon Carbide Bodies
- British Ceramic Research Association, Stoke‐on‐Trent, U.K.
- (1972) Special Ceramics , vol.5 , pp. 99-123
- Forrest, C.W.¹ Kennedy, P.² Shennan, J.V.³

3
- 0018006101
- Development and Processing of Injection‐Moldable Reaction‐Sintered SiC Compositions
- (1978) Am. Ceram. Soc. Bull. , vol.57 , Issue.8 , pp. 744-747
- Willerment, P.A.¹ Pett, R.A.² Whalen, T.J.³

4
- 84979379770
- Edited by, R. C. Marshall, J. W. Faust, Jr, C. E. Ryan, University of South Carolina, Columbia, SC
- (1974) Silicon Carbide‐1973 , pp. 222-229
- Sato, H.¹ Shinozaki, S.² Yessik, M.³ Noakes, J.E.⁴

5
- 0017970920
- Recrystallization and Phase Transformation in Reaction‐Sintered SiC
- (1978) J. Am. Ceram. Soc. , vol.61 , Issue.5-6 , pp. 237-242
- Shinozaki, S.¹ Noakes, J.E.² Sato, H.³

6
- 0017959828
- Microstructural Characterization of “REFEL” (Reaction‐Bonded) Silicon Carbides
- (1978) J. Mater. Sci. , vol.13 , pp. 885-904
- Sawyer, G.R.¹ Page, T.F.²

7
- 0022696246
- Microstructural Evolution in Reaction‐Bonded Silicon Carbide
- (1986) ibid. , vol.21 , pp. 1377-1397
- Ness, J.N.¹ Page, T.F.²

8
- 0022563991
- Reaction Mechanism in Carbon‐Liquid Silicon Systems at Elevated Temperatures
- (1986) Ceram. Int. , vol.12 , pp. 99-106
- Pampuch, R.¹ Warasek, E.² Bialoskorski, J.³

9
- 84985139119
- Rise in Temperature of SiC Pellet Involving Reaction Sintering
- (1976) Bull. Res. Lab. Nucl. Reactors , vol.1 , pp. 37-42
- Hase, T.¹ Suzuki, H.²

10
- 33750282370
- Solubility of Carbon in Silicon and Germanium
- (1959) J. Chem. Phys. , vol.30 , Issue.6 , pp. 1551-1555
- Scace, R.I.¹ Slack, G.A.²

11
- 84986365164
- Reactivity of Solids, Kagaku Sosetsu, No. 9, pp., ; Nippon Kagakukai
- (1975) Formation of Crystal Nuclear , pp. 61-86
- Kiriyama, R.¹ Bando, Y.² Tanaka, J.³

12
- 84975364119
- Kinetics of the Liquid‐Phase Reactive‐Sintering of Silicon Carbide
- (1973) Poroshk. Met. , vol.125 , Issue.5 , pp. 35-43
- Gnesin, G.G.¹ Raichenko, A.I.²

13
- 4544270921
- The Standard Free Energy of Formation of Silicon Carbide
- (1960) J. Phys. Chem. , vol.64 , Issue.3 , pp. 368-370
- Smiltens, J.¹

14
- 0004217652
- 2d ed., Wiley, New York
- (1975) Introduction to Ceramics , pp. 328-333
- Kingery, W.D.¹ Bowen, H.K.² Uhlmann, D.R.³

15
- 84985157650
- Transport of Fine‐Grained β‐SiC in SiC/Liquid Si System
- (1988) Adv. Ceram. Mater. , vol.3 , Issue.3 , pp. 291-293
- Lim, C.B.¹ Iseki, T.²

16
- 84921144629
- Microstructure of Silicon Carbide Prepared by Reaction Sintering
- (1976) Journal of the Ceramic Association, Japan , vol.84 , Issue.7 , pp. 332-337
- Hase, T.¹ Suzuki, H.²

17
- 84985145507
- in Ref. 14
- Kingery, W.D.¹ Bowen, H.K.² Uhlmann, D.R.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.