Relative Cross Sections for Electron‐Impact Dissociation of SF6 into SFx (x = 1−3) Neutral Radicals

Contributions to Plasma Physics

Volumn 35, Issue 4-5, 1995, Pages 405-413

  Iio, M ^a   Goto, M ^a   Toyoda, H ^a   Sugai, H ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84984371153     PISSN: 08631042     EISSN: 15213986     Source Type: Journal    
DOI: 10.1002/ctpp.2150350408     Document Type: Article

References (18)

1. Electron and Chemical Kinetics in the Low-Pressure RF Discharge Etching of Silicon in SF6
2. Experimental Evaluation of Surface Tension Criteria for Alignment Behavior of Liquid Crystals on Solid Surfaces