An investigation of LPCVD and PECVD of in situ doped polycrystalline silicon for VLSI

Advanced Materials for Optics and Electronics

Volumn 1, Issue 5, 1992, Pages 255-259

  Ahmed, Waqar ^a   Ahmed, Ejaz ^a,b  

^a UNIVERSITY OF SALFORD   (United Kingdom)

^b BAHAUDDIN ZAKARIYA UNIVERSITY   (Pakistan)

Author keywords

In situ doping; LPCVD; PECVD; polycrystalline silicon; VLSI

Indexed keywords

EID: 84984104677     PISSN: 10579257     EISSN: 10990712     Source Type: Journal    
DOI: 10.1002/amo.860010508     Document Type: Article

References (12)

1. Properties of Plasma-Enhanced CVD Silicon Films