Growth of ultrathin silicon dioxide films during rapid-thermal oxidation

9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001

Volumn , Issue , 2001, Pages 287-295

  Zeng, Taofang ^a   Doumanidis, H ^a   Hebb, J ^a   Brown, D ^a  

^a AXCELIS TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT; ION BEAM LITHOGRAPHY; MASS SPECTROMETRY; OXIDE FILMS; RAPID THERMAL PROCESSING; SECONDARY ION MASS SPECTROMETRY; SILICA; THERMOOXIDATION; THICK FILMS; THIN FILMS; ULTRATHIN FILMS;

ISOTOPIC LABELING; MEDIUM ENERGY ION SCATTERING SPECTROSCOPIES; RAPID THERMAL FURNACE; RAPID THERMAL OXIDATION; SECONDARY ION MASS SPECTROSCOPY; THIN SILICON OXIDE; TRANSITIONAL LAYERS; ULTRATHIN SILICON DIOXIDE;

SILICON OXIDES;

EID: 84983109527     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2001.1013781     Document Type: Conference Paper

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