Fast and uniform growth of graphene glass using confined-flow chemical vapor deposition and its unique applications

Nano Research

Volumn 9, Issue 10, 2016, Pages 3048-3055

  Chen, Zhaolong ^a   Guan, Baolu ^a,b   Chen, Xu dong ^a   Zeng, Qing ^c   Lin, Li ^a   Wang, Ruoyu ^a   Priydarshi, Manish Kr ^a   Sun, Jingyu ^a   Zhang, Zhepeng ^a   Wei, Tongbo ^c   Li, Jinmin ^c   Zhang, Yanfeng ^a,d   Zhang, Yingying ^e   Liu, Zhongfan ^a  

^a PEKING UNIVERSITY   (China)

^b BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

^d PEKING UNIVERSITY   (China)

^e TSINGHUA UNIVERSITY   (China)

Author keywords

confined flow chemical vapor deposition; epitaxial AlN film; graphene glass; transparent heating device

Indexed keywords

ALUMINUM COATINGS; ALUMINUM NITRIDE; BUFFER LAYERS; CONFINED FLOW; FLOW OF GASES; GLASS; GRAPHENE; GROWTH RATE; III-V SEMICONDUCTORS; NITROGEN COMPOUNDS; SAPPHIRE; SUBSTRATES;

ALUMINUM NITRIDE THIN FILMS; CARBON PRECURSORS; CHEMICAL VAPOR DEPOSITIONS (CVD); COLLISION PROBABILITY; EPITAXIAL ALN; HEATING DEVICES; REACTIVE FRAGMENTS; STUMBLING BLOCKS;

CHEMICAL VAPOR DEPOSITION;

EID: 84982306981     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-016-1187-6     Document Type: Article

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