Fabrication and high visible-light-driven photocurrent response of g-C 3 N 4 film: The role of thiourea

Applied Surface Science

Volumn 389, Issue , 2016, Pages 1076-1083

  Ye, Lijuan ^a   Chen, Shijian ^a  

^a CHONGQING UNIVERSITY   (China)

Author keywords

Film; g C 3 N 4; Heterojunction; Photocurrent; Thiourea

Indexed keywords

BAND STRUCTURE; CARBON FILMS; CHARGE TRANSFER; DEPOSITION; DOPING (ADDITIVES); FABRICATION; FILMS; HETEROJUNCTIONS; INDIUM COMPOUNDS; LIGHT; OXIDE FILMS; PHOTOCURRENTS; SUBSTRATES; THIOUREAS; TIN OXIDES;

CHARGE TRANSFER MECHANISMS; G-C3N4; HETEROJUNCTION STRUCTURES; INDIUM TIN OXIDE SUBSTRATES; PHOTOCURRENT RESPONSE; PHOTOELECTROCHEMICALS; POLYMERIZATION PROCESS; VISIBLE-LIGHT-DRIVEN;

THIN FILMS;

EID: 84982153306     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2016.08.038     Document Type: Article

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