Memory Switching: Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology (Adv. Funct. Mater. 36/2014)

Advanced Functional Materials

Volumn 24, Issue 36, 2014, Pages 5772-

  Sun, Haitao ^a   Liu, Qi ^a   Li, Congfei ^a   Long, Shibing ^a   Lv, Hangbing ^a   Bi, Chong ^a   Huo, Zongliang ^a   Li, Ling ^a   Liu, Ming ^a  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

conductive filaments; memory switching; resistive random access memory (RRAM); threshold switching

Indexed keywords

EID: 84982095544     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201470243     Document Type: Note

References (0)