Hydrogen Doped Metal Oxide Semiconductors with Exceptional and Tunable Localized Surface Plasmon Resonances

Journal of the American Chemical Society

Volumn 138, Issue 29, 2016, Pages 9316-9324

  Cheng, Hefeng ^a   Wen, Meicheng ^a   Ma, Xiangchao ^c,d   Kuwahara, Yasutaka ^a,b   Mori, Kohsuke ^a,b   Dai, Ying ^c   Huang, Baibiao ^c   Yamashita, Hiromi ^a,b  

^a OSAKA UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c SHANDONG UNIVERSITY   (China)

^d XIDIAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CATALYSIS; DENSITY FUNCTIONAL THEORY; HYDROGEN; LIGHT; METALLIC COMPOUNDS; METALS; MOLYBDENUM OXIDE; MOS DEVICES; OXIDE SEMICONDUCTORS; PLASMONS; RESONANCE; TRANSISTORS;

CATALYTIC PERFORMANCE; CONTROLLED MANIPULATIONS; LARGE-SCALE APPLICATIONS; LOCALIZED SURFACE PLASMON RESONANCE; METAL OXIDE SEMICONDUCTOR; REDUCTION TEMPERATURES; STOICHIOMETRIC COMPOSITIONS; VISIBLE-LIGHT IRRADIATION;

SURFACE PLASMON RESONANCE;

HYDROGEN; METAL OXIDE; MOLYBDENUM; TUNGSTEN;

ABSORPTION; ARTICLE; CALCULATION; CATALYSIS; CONTROLLED STUDY; DENSITY FUNCTIONAL THEORY; ELECTRON; IRRADIATION; LIGHT; OXIDATION; SEMICONDUCTOR; STOICHIOMETRY; SURFACE PLASMON RESONANCE; SURFACE PROPERTY; TEMPERATURE;

EID: 84979934618     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/jacs.6b05396     Document Type: Article

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