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Journal of Applied Physics

Volumn 115, Issue 4, 2014, Pages

Co2FeAl Heusler thin films grown on Si and MgO substrates: Annealing temperature effect

(8) Belmeguenai, M a Tuzcuoglu, H a Gabor, M S b Petrisor, T b Tiusan, C b,c Zighem, F a Cherif S M a Moch, P a

a UNIVERSITÉ PARIS 13 (France)

b TECHNICAL UNIVERSITY OF CLUJ NAPOCA (Romania)

c INSTITUT JEAN LAMOUR (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ANNEALING; CARBON DIOXIDE; COBALT; CRYSTAL STRUCTURE; FERROMAGNETIC RESONANCE; MAGNESIA; SILICON; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION;

ANNEALING TEMPERATURE EFFECTS; ANNEALING TEMPERATURES; EPITAXIAL RELATIONS; FOUR-FOLD SYMMETRY; IN-PLANE ANISOTROPY; SI (001) SUBSTRATE; UNIAXIAL ANISOTROPY FIELDS; X-RAYS DIFFRACTION;

EPITAXIAL GROWTH;

EID: 84979202510 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.4863398 Document Type: Article

Times cited : (84)

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