Detachment of CVD-grown graphene from single crystalline Ni films by a pure gas phase reaction

Surface Science

Volumn 653, Issue , 2016, Pages 143-152

  Zeller, Patrick ^a   Henß, Ann Kathrin ^a   Weinl, Michael ^b   Diehl, Leo ^a   Keefer, Daniel ^a   Lippmann, Judith ^a   Schulz, Anne ^a   Kraus, Jürgen ^c   Schreck, Matthias ^b   Wintterlin, Joost ^a  

^a UNIVERSITY OF MUNICH   (Germany)

^b UNIVERSITY OF AUGSBURG   (Germany)

^c TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

CVD; Gas phase etching; Graphene transfer; Mond process; Monolayer graphene; Ni(111)

Indexed keywords

BUFFER LAYERS; CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; ELECTRONS; GASES; NICKEL; OPTICAL WAVEGUIDES; PHASE INTERFACES; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON WAFERS; WET ETCHING; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL TRANSPORT REACTIONS; CVD-GROWN GRAPHENE; DEFECT CONCENTRATIONS; GAS PHASE ETCHING; NI(111); OXIDE BUFFER LAYERS; RESIDUAL PARTICLES; SINGLE-CRYSTALLINE;

GRAPHENE;

EID: 84978149852     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2016.06.014     Document Type: Article

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