Photoinduced Reduction of Nitroarenes Using a Transition-Metal-Loaded Silicon Semiconductor under Visible Light Irradiation

ACS Catalysis

Volumn 6, Issue 7, 2016, Pages 4394-4398

  Tsutsumi, Ken ^a   Uchikawa, Fumito ^b   Sakai, Kentaro ^b   Tabata, Kenji ^b  

^a TOKYO METROPOLITAN UNIVERSITY   (Japan)

^b UNIVERSITY OF MIYAZAKI   (Japan)

Author keywords

formic acid; reduction; silicon; transition metal loaded semiconductor; visible light responsiveness

Indexed keywords

FORMIC ACID; IRRADIATION; LIGHT; METAL NANOPARTICLES; REDUCTION; SEMICONDUCTING SILICON; SILICON; TRANSITION METALS;

HYDROGEN SOURCES; PHOTOCATALYTIC REACTIONS; PHOTOCATALYTIC REDUCTION; REDUCTION OF NITROARENES; SACRIFICIAL REAGENT; SILICON NANOPARTICLES; VISIBLE LIGHT; VISIBLE-LIGHT IRRADIATION;

PALLADIUM;

EID: 84977139179     PISSN: 21555435     EISSN: None     Source Type: Journal    
DOI: 10.1021/acscatal.6b00886     Document Type: Article

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