Optical measurement of the refractive index, layer thickness, and volume changes of thin films

Applied Optics

Volumn 28, Issue 23, 1989, Pages 5095-5104

  Holtslag, A H M ^a   Scholte, P M L O ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84975577851     PISSN: 1559128X     EISSN: 21553165     Source Type: Journal    
DOI: 10.1364/AO.28.005095     Document Type: Article

References (14)

1. D. J. Gravesteijn, H. F. J. J. van Tongeren, M. M. Sens, T. C. J. M. Bertens, and C. J. van de Poel, “Phase-Change Optical Data Storage in GaSb,” Appl. Opt. 26, 4772-4776 (1988).
2. J. C. Manifacier, J. Gasiot and J. P. Fillard, “A Simple Method for the Determination of the Optical Constants n, k and the thickness of a Weakly Absorbing Thin Film,” J. Phys. E. 9, 1002-1004 (1976).
3. W. E. Case, “Algebraic Method for Extracting Thin-Film Optical Parameters from Spectrophotometer Measurements,” Appl. Opt. 22, 1832-1836 (1983).
4. M. Chang and U. J. Gibson, “Optical Constant Determinations of Thin Films by a Random Search Method,” Appl. Opt. 24, 504-507 (1985).
5. C. J. van de Poel, “Rapid Crystallization of Thin Solid Films,” J. Mater. Res. 3, 126-132 (1988).
6. L. Vriens and W. Rippens, “Optical Constants of Absorbing Thin Solid Films on a Substrate,” Appl. Opt. 22, 4105-4110 (1983).
7. H. Hora, “Stresses in Silicon Crystals from Ion-Implanted Amorphous Regions,” Appl. Phys. A 32, 217-221 (1983).
8. M. Born and E. Wolf, Principles of Optics (Pergamon, New York, 1980).
9. M. Mansuripur, “Distribution of Light at and Near the Focus of High-Numerical-Aperture Objectives,” J. Opt. Soc. Am. A 3, 2086-2093 (1986).
10. J. Stuke and G. Zimmer, “Optical Properties of Amorphous 3-5 Compounds,” Phys. Status Solidi B 49, 513-523 (1972).
11. D. E. Aspnes and A. A. Studna, “Dielectric Functions and Optical Parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV,” Phys. Rev. B 27, 985-1009 (1983).
12. The value reported in Ref. 1 for na of a-GaSb at X0 = 780 nm equals 4.6 — 1.2i instead of the printed value 4.6 — 0.2t: a printing error.
13. Private communications to C. J. van de Poel, see Ref. 5.
14. G. Bouwhuis, J. Braat, A. Huijser, J. Pasman, G. van Rosmalen, and K. Schouhamer Immink, Principles of Optical Disk Systems (Hilger, Bristol, 1986).