Chromium Deposition from Dicumene-Chromium to Form Metal-Semiconductor Devices

Journal of the Electrochemical Society

Volumn 118, Issue 1, 1971, Pages 163-165

  Anantha, N G ^a   Doo, V Y ^a   Seto, D K ^a  

^a IBM   (United States)

Author keywords

chromium silicon rectifiers; hot carrier device; metal semiconductor contacts; Schottky barrier

Indexed keywords

EID: 84975434861     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2407936     Document Type: Article

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