A Split-Level Diagonal Bit-line (SLDB) stacked capacitor cell for 256 Mb DRAMs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 799-802

  Hamada, T ^b   Tanabe, N ^b   Watanabe, H ^b   Takeuchi, K ^b   Kasai, N ^b   Hada, H ^b   Shibahara, K ^b   Tokashiki, K ^b   Nakajima, K ^b   Hirasawa, S ^b   Ikawa, E ^b   Saeki, T ^a,b   Kakehashi, E ^a,b   Ohya, S ^a,b   Kunio, T ^b  

^a ULSI Device Development Laboratories   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLS; CYTOLOGY; ELECTRON DEVICES;

ALIGNMENT TOLERANCE; CAPACITOR CELLS; CONTACT HOLES; LINE NOISE; MEMORY CELL; SMALL CELLS; STORAGE CAPACITANCE; STORAGE NODES;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 84975343987     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307478     Document Type: Conference Paper

References (6)

1. H. Masuda, R. Hori, Y. Kamigaki, K. Itoh, H. Kawamoto and H. Katto, "A SV-Only 64k Dynamic RAM Based on High S/N Design, " IEEE J. Solid-State Circuits, SC-1S, p. 846, 1980.
2. MSakao et al., "A Capacitor-Over-Bit-Iine (COB) Cell with a Hemispherical-Grain Storage Node for 64Mb DRAMs, " IEDM Tech. Dig., p. 655, 1990.
3. S. Kimura et al., "A New Stacked Capacitor DRAM Cell Characterized by a Storage Capacitor on a Bit-line Structure, " IEDM Tech. Dig., p. 596, 1988.
4. T. Saeki, T. Tanigawa, K. Noda, T. Murotani and S. Ohya, "A Study of Close Packed Folded Bit-line Cell Array (CPF) and Three Phase Folded Bit-line Array/Circuit (TPF) for DRAM's, " Proc. of IEICE spring conf, C-665, p. 256, 1991.
5. K. Shibahara, Y. Fujimoto, M. Hamada, S. Iwao, K. Tokastiiki and T. Kunio, "Trench Isolation with V (Nabla)-Shaped Buried Oxide for 256Mega-Bit DRAMs, " to be submitted in this digest.
6. H. Watanabe, T. Tatsumi, S. Ohnishi, T. Hamada, I. Honma and T. Kikkawa, "A New Cylindrical Capacitor Using Hemispherical Grained Si (HSG-Si) for 2S6MbDRAMs, " to be submitted in this digest.