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Volumn 123, Issue 7, 1976, Pages 199C-205C

Physical Properties of SnO2 Materials: I. Preparation and Defect Structure

Author keywords

doping; impurities; native defects; single crystals; sintered material; thin films

Indexed keywords


EID: 84975341200     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2133010     Document Type: Article
Times cited : (334)

References (63)
  • 1
    • 0004033098 scopus 로고
    • Crystal Structures
    • Interscience, New York
    • R.W.G. Wyckoff, “Crystal Structures,” Interscience, New York (1951).
    • (1951)
    • Wyckoff, R.W.G.1
  • 3
    • 0003438540 scopus 로고
    • The Nature of the Chemical Bond
    • Cornell University Press, New York
    • L. Pauling, “The Nature of the Chemical Bond,” Cornell University Press, New York (1960).
    • (1960)
    • Pauling, L.1
  • 25
    • 0003548707 scopus 로고
    • Oxide Semiconductors
    • Pergamon Press, Oxford-New York
    • Z.M. Jarzebski, “Oxide Semiconductors,” Pergamon Press, Oxford-New York (1973).
    • (1973)
    • Jarzebski, Z.M.1
  • 44
    • 84975362272 scopus 로고
    • Proceedings Elec. Comp. IEEE
    • H. Sasaki, Y. Nishimura, and T. Yamamote, Proceedings Elec. Comp. IEEE, p. 79 (1966).
    • (1966) , pp. 79
    • Sasaki, H.1    Nishimura, Y.2    Yamamote, T.3
  • 60
    • 84975444562 scopus 로고
    • M. Eng. Thesis, McMaster University
    • D.A. Lepic, M. Eng. Thesis, McMaster University (1972).
    • (1972)
    • Lepic, D.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.