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Volumn 93, Issue 24, 2016, Pages

Semiconductor-topological insulator transition of two-dimensional SbAs induced by biaxial tensile strain

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Indexed keywords


EID: 84975137660     PISSN: 24699950     EISSN: 24699969     Source Type: Journal    
DOI: 10.1103/PhysRevB.93.245303     Document Type: Article
Times cited : (141)

References (50)
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    • C. Kamal and M. Ezawa, Phys. Rev. B 91, 085423 (2015). 10.1103/PhysRevB.91.085423
    • (2015) Phys. Rev. B , vol.91 , pp. 085423
    • Kamal, C.1    Ezawa, M.2
  • 21
    • 84900478786 scopus 로고    scopus 로고
    • R. Fei and L. Yang, Nano Lett. 14, 2884 (2014). 10.1021/nl500935z
    • (2014) Nano Lett , vol.14 , pp. 2884
    • Fei, R.1    Yang, L.2
  • 43
    • 84975130150 scopus 로고    scopus 로고
    • See Supplemental Material at http://link.aps.org/supplemental/10.1103/PhysRevB.93.245303 for more detailed strucuture, charge density distribution, density of states, band structures, and phonon dispersion for 2D SbAs.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.