7-Octenyltrichrolosilane/trimethyaluminum hybrid dielectrics fabricated by molecular-atomic layer deposition on ZnO thin film transistors

Japanese Journal of Applied Physics

Volumn 55, Issue 6, 2016, Pages

  Huang, Jie ^a   Lee, Mingun ^a,b   Lucero, Antonio T ^a   Cheng, Lanxia ^a   Ha, Min Woo ^c   Kim, Jiyoung ^a  

^a The University of Texas at Dallas   (United States)

^b Dongjin Semichem Co Ltd   (South Korea)

^c Myong Ji University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; DEPOSITION; DIELECTRIC MATERIALS; FLEXIBLE ELECTRONICS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GATE DIELECTRICS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HYBRID MATERIALS; LEAKAGE CURRENTS; RECONFIGURABLE HARDWARE; THIN FILMS; THRESHOLD VOLTAGE; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

ELECTRICAL MEASUREMENT; ELECTRONICS APPLICATIONS; FIELD-EFFECT MOBILITIES; HIGH DIELECTRIC CONSTANTS; INSULATING PROPERTIES; ORGANIC-INORGANIC HYBRID; ORGANIC-INORGANIC HYBRID FILMS; THIN-FILM TRANSISTOR (TFTS);

THIN FILM TRANSISTORS;

EID: 84974624001     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.55.06GK04     Document Type: Conference Paper

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