A comparison of MBE- and MOCVD-grown InGaAsN

MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Volumn , Issue , 2002, Pages 291-292

  Ptak, A J ^a   Friedman, D J ^a   Johnston, S W ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY;

HIGH-EFFICIENCY SOLAR CELLS; INGAASN; LIGHT EMITTERS; MATERIAL QUALITY; WAVELENGTH RANGES;

MOLECULAR BEAMS;

EID: 84968677396     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MBE.2002.1037874     Document Type: Conference Paper

References (0)