Oxide breakdown model for very low voltages

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1993, Pages 43-44

  Schuegraf, Klaus F ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84968226687     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.1993.760236     Document Type: Conference Paper

References (6)

1. A. Berman in Proc. Int. Rel. Phys. Symp., p. 204, 1981.
2. I. C. Chen et al., IEEE Trans. Elec. Dev., p. 413, 1985.
3. Z. A. Weinberg et al., J. Appl. Phvs., p. 248, 1976.
4. S. E. Holland et al., IEEE Elec. Dev. Let., p. 572, 1987.
5. C. Chang et al., J. Appl. Phvs., p. 302, 1985.
6. K. F. Schuegraf et al., Symp. VLSI Tech., p. 18, 1992.