A ferroelectric thin film technology for low-voltage nonvolatile memory

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1993, Pages 87-88

  Moazzami, R ^a   Maniar, P D ^a   Jones, R E ^a   Campbell, A C ^a   Mogab, C J ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC THIN FILMS; FERROELECTRICITY; NONVOLATILE STORAGE; VLSI CIRCUITS;

DESIGN CURVES; LOW POWER; LOW VOLTAGES; LOW-POWER OPERATION; NON-VOLATILE MEMORY; NON-VOLATILE MEMORY APPLICATION;

THIN FILMS;

EID: 84968155720     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.1993.760258     Document Type: Conference Paper

References (3)

1. R. Moazzami et al., IEDM Tech. Dig., p. 973, 1992.
2. R. Moazzami et al., VLSI Tech. Symp., p. 61, 1991.
3. P.D. Beale et al., Ferroelectrics, vol. 116, p. 111, 1991.