A five-level time-domain model for quantum dot lasers: Influence of carrier capture and escape processes on dynamic and static characteristic

Proceedings of LFNM 2001 - 3rd International Workshop on Laser and Fiber-Optical Networks Modeling

Volumn , Issue , 2001, Pages 64-68

  Lysak, V V ^a   Shulika, A V ^a   Sukhoivanov, I A ^a  

^a KHARKIV NATIONAL UNIVERSITY OF RADIO ELECTRONICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

BEHAVIORAL RESEARCH; NANOCRYSTALS; SEMICONDUCTOR QUANTUM DOTS;

CARRIER CAPTURE; DYNAMIC BEHAVIORS; ESCAPE PROCESS; LASER PERFORMANCE; OPTICAL CONFINEMENT LAYERS; STATIC CHARACTERISTIC; TIME DOMAIN MODELING; WETTING LAYER;

QUANTUM DOT LASERS;

EID: 84963877311     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/LFNM.2001.930206     Document Type: Conference Paper

References (3)

1. N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg, "Quantum dot heterostructures: fabrication properties, lasers", Fizika i tekhnika poluprovodnikov, vol. 32. No 4, pp. 385-410,1998 (in Russian)
2. L. V. T. Nguyen, A. J. Lowery, P. C. R. Gurney, D. Novak, "A time-domain model for high-speed quantum-well lasers including carrier transport effects", IEEE J. Select. Top. Quantum Electron., vol. 1, No 2, June, pp. 494-504, 1995
3. P. Bhattacharya, D. Klotzkin, O. Qasaimeh, W. Zhou, S. Krishna, D. Zhu, "High-speed modulation and switching characteristics of In(Ga)As-Al(Ga)As self-organized quantum-dot lasers", IEEE J. Select. Top. Quantum Electron., vol. 6, No 3, May/June, pp. 426-438, 2000