Plasma immersion ion implantation as an alternative doping technology for ULSI

Extended Abstracts of the 2nd International Workshop on Junction Technology, IWJT 2001

Volumn , Issue , 2001, Pages 21-27

  Lee, Kilho ^a  

^a INFINEON TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; PLASMA APPLICATIONS;

APPLICATION AREA; DEVICE PERFORMANCE; PLASMA IMMERSION ION IMPLANTATION; ULTRA LARGE SCALE INTEGRATED CIRCUITS;

ULSI CIRCUITS;

EID: 84963735106     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2001.993819     Document Type: Conference Paper

References (34)

1. J.R.Conrad, J.L.Radtke, R.A.Dodd, F.J.Worzala, and N.C.Tran, J.Appl.Phys. vol.62, p.4561, 1987
2. B.Mizuno, I.Nakayama, N.Aoi, M.Kubota, and T.Komeda, Appl.Phys.Lett. vol. 53, p.2059, 1988
3. X.Y.Qian, N.W.Cheung, M.A.Lieberman, and R.Brennan, Nucl.Inst.& Meth. vol. B55, p.898, 1988
4. X.Y.Qian, N.W.Cheung, M.A.Lieberman, and S.B.Felch, Appl.Phys.Lett. vol.59, p.348, 1991
5. B.Mizuno, M.Takase, I.Nakayama, and M.Ogura, Dig. of Symp. on VLSI Tech. p.66, 1996
6. M.Takase, K.Yamashita, A.Hori, and B.Mizuno, IEDM Tech.Dig. p.475, 1997
7. J.M.Ha, J.W.Park, W.S.Kim, S.P.Kim, W.S.Song, H.S.Kim, H.J.Song, K.Fujihara, H.K.Kang, M.Y.Lee, S.Felch, U.Jeong, M.Goeckner, K.H.Shim, H.J.Kim, H.T.Cho, Y.K.Kim, D.H.Ko, and G.C.Lee, IEDM Tech.Dig. p.639, 1998
8. J.C.Hu, R.Kraft, M.Rodder, and I.Chen, Proc. SPIE Microelectronic Device Technology II, vol. 3506, p.82, 1998
9. th European Solid State Device Research Conf. p.392, 1999
10. D.Lenoble, F.Arnaud, A.Grouillet, R.Liebert, S.Walther, S.B.Felch, Z.Fang, and M.Haond, Dig. of Symp. on VLSI Tech. p.110, 2000
11. L.Nesbit, J.Alsmeier, B.Chen, J.DeBrosse, P.Fahey, M.Gall, J.Gambino, S.Gernhardt, H.Ishiuchi, R.Kleinhenz, J.Madelman, T.Mii, M.Morikado, A.Nitayama, S.Parke, H.Wong, and G.Bronner, IEDM Tech.Dig. p.627, 1993
12. C.Parks, H.Glawischnig, M.Levy, R.Stengl, and C.Dieseldoff, J.Vac.Sci.Technol. A 17, p.1130, 1999
13. C.Yu and N.W.Cheung, IEEE Elec.Dev.Lett. vol. 15, p.196, 1994
14. G.T.Jeong, K.C.Lee, D.W.Ha, K.H.Lee, K.H.Kim, I.G.Kim, D.H.Kim, and K.Kim, IEEE Trans.Elec.Dev. vol.44, p.2064, 1997
15. K.S.Tang, W.S.Lau, and G.S.Samudra, IEEE Circuits Dev.Mag. vol.13, p.27, 1997
16. M.Yoshimaru, J.Miyano, N.Inoue, A.Sakamoto, H.Tamura, and M.Ino, IEDM Tech.Dig. p.659, 1990
17. D.Ha, D.Shin, G.Koh, J.Lee, S.Lee, Y. Ahn, H. Jeong, T. Chung, and K. Kim, IEEE Trans.Elec.Dev. vol. 47, p.1499,2000
18. C.Kao, C.Lai, and C.Lee, IEEE Trans.Elec.Dev. vol. 45, p.1927, 1998
19. H.Moon, H.Choi, H.Jang, C.Hwang, S.Woo, I.Han, and H.Yang, J.Vac.Sci.Technol. B, vol. 17, p.1017, 1999
20. X.Y.Qian, N.W.Cheung, M.A.Lieberman, and M.I.Current, Nucl.Instr. & Meth. vol. B55, p.821, 1991
21. B.Doyle, H.Soleimani, and A.Philipossian, IEEE Elec. Dev. Lett. vol. 16, p.301, 1995
22. M.Togo, K.Noda, and T.Tanigawa, IEDM Tech.Dig. p.347, 1998
23. Y.King, C.Kuo, T.King, and C.Hu, IEDM Tech.Dig. p.585, 1998
24. A.Ono, K.Fukasaku, T.Makabe, S.Koyama, N.Ikezawa, K.Ando, T.Suzuki, K.Imai, and N.Nakamura, Dig. of Symp. on VLSI Tech. p.79, 2001
25. H.P.Tuinhout, A.H.Montree, J.Schmitz, and P.A.Stolk, IEDM Tech.Dig. p.631, 1997
26. B.Yu, D.-H.Ju, W.-C.Lee, N.Kepler, T.-J.King, and C.Hu, IEEE Elec. Dev. vol. 45, p.1253, 1998
27. S.Chang, C.Chang, T.Chao, S.Zhong, W.Yeh, and T.Huang, IEEE Elec. Dev. Lett. vol. 21, p.381, 2000
28. K.S.Tang, W.S.Lau, and G.S.Samudra, IEEE Cir.Dev.Mag. vol. 13, p.27, 1997
29. M.Takeuchi, K.Inoue, M.Sakao, T.Sakoh, T.Kitamura, S.Arai, T.Iizuka, T.Yamamoto, H.Shirai, Y.Aoki, M.Hamada, R.Kubota, and S.Kishi, Dig. of Symp. on VLSI Tech. p.29, 2001
30. K.Lee and I.McStay, US patent (pending)
31. S.Wolf and R.N.Tauber, Silicon Processing for the VLSI Era, vol.1 Process Technology, Lattice Press, 1986, p.211-213
32. st,2000)
33. H.Tews, B.Lee, U.Gruening, and R.Jammy, US patent (pending)
34. T.Sheng, S.B.Felch, and C.B.Cooper III, J.Vac.Sci.Tech. B. vol. 12, p.969, 1994